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Toshiba |
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SA2061
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −20 V
Collector-emitter voltage
VCEO −20 V
Emitter-base voltage
VEBO −7 V
Collector current
Base current
Collector power
dissipation
DC
Pulse
t = 10 s
DC
IC
ICP
IB
PC
(Note 1)
−2.5
−4
−250
1
0.625
A
mA
W
JEDEC
JEITA
TOSHIBA
―
―
2-3S1C
Junction temperature
Tj
150 °C
Weight: 0.01 g (typ.)
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-07-17
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = −20 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.5 A
VCE = −2 V, IC = −1.6 A
IC = −1.6 A, IB = −53 mA
IC = −1.6 A, IB = −53 mA
VCB = −10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ≈ −12 V, RL = 7.5 Ω
IB1 = 53 mA, IB2 = 53 mA
Marking
2SA2061
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
−20 ― ― V
200 ― 500
100 ―
―
― ― −0.19 V
― ― −1.1 V
― 28 ― pF
― 70 ―
― 150 ―
ns
― 40 ―
20 μs
0
IB1
IB2 IB1
Input
Duty cycle < 1%
IB2
VCC
Output
Figure 1 Switching Time Test Circuit &
Timing Chart
W
Lot code (year)
Dot: even year
No dot: odd year
Part No. (or abbreviation code)
E
Lot code (month)
2 2009-07-17
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