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A2061 반도체 회로 부품 판매점

PNP Transistor - 2SA2061



Toshiba 로고
Toshiba
A2061 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SA2061
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 20 V
Emitter-base voltage
VEBO 7 V
Collector current
Base current
Collector power
dissipation
DC
Pulse
t = 10 s
DC
IC
ICP
IB
PC
(Note 1)
2.5
4
250
1
0.625
A
mA
W
JEDEC
JEITA
TOSHIBA
2-3S1C
Junction temperature
Tj
150 °C
Weight: 0.01 g (typ.)
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-07-17


A2061 데이터시트, 핀배열, 회로
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 20 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.6 A
IC = 1.6 A, IB = 53 mA
IC = 1.6 A, IB = 53 mA
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ≈ −12 V, RL = 7.5
IB1 = 53 mA, IB2 = 53 mA
Marking
2SA2061
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
20 ― ― V
200 500
100
― ― −0.19 V
― ― −1.1 V
28 pF
70
150
ns
40
20 μs
0
IB1
IB2 IB1
Input
Duty cycle < 1%
IB2
VCC
Output
Figure 1 Switching Time Test Circuit &
Timing Chart
W
Lot code (year)
Dot: even year
No dot: odd year
Part No. (or abbreviation code)
E
Lot code (month)
2 2009-07-17




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A2061 transistor

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