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Sanyo |
Ordering number:ENN6367
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2022/2SC5610
DC/DC Converter Applications
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· High allowable power dissipation.
Package Dimensions
unit:mm
2041A
[2SA2022/2SC5610]
4.5
10.0 2.8
3.2
Specifications
( ) : 2SA2022
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
Tc=25˚C
Conditions
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)10V, IC=(–)500mA
VCB=(–)10V, f=1MHz
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220ML
Ratings
(–50)60
(–)50
(–)6
(–)7
(–)10
(–)1.2
2
18
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 µA
(–)0.1 µA
150 300
(290)
MHz
330 MHz
(50)28
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2470 No.6367–1/5
Continued on preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SA2022/2SC5610
Symbol
Conditions
VCE(sat) IC=(–)2.5A, IB=(–)125mA
VBE(sat) IC=(–)2.5A, IB=(–)125mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Ratings
min typ
(–150)
130
(–)0.85
(–50)
60
(–)50
(–)6
30
(250)
300
15
max
(–300)
260
(–)1.2
Unit
mV
mV
V
V
V
V
V
ns
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
(For PNP, the polarity is reversed.)
IB2
OUTPUT
VR RB
RL
50Ω + +
100µF 470µF
VBE=--5V
VCC=20V
10IB1= --10IB2= IC=2A
--7
2SA2022
IC -- VCE
--100mA
--120mA
--6 --140mA
--160mA
--5 --180mA
--4
--3
--80mA
--60mA
--40mA
--20mA
--2 --10mA
--5mA
--1
0
0
--0.4
--0.8
--1.2
--1.6
Collector-to-Emitter Voltage, VCE – V
--7
2SA2022
IC -- VBE
--6 VCE=--2V
IB=0
--2.0
IT01345
--5
--4
--3
--2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V IT01346
7
2SC5610
6 180mA
5
4
3
IC -- VCE
120mA
140mA
100mA
160mA
80mA
60mA
40mA
20mA
2 10mA
1 5mA
0
0 0.4 0.8 1.2 1.6
Collector-to-Emitter Voltage, VCE – V
7
2SC5610
IC -- VBE
VCE=2V
6
IB=0
2.0
IT01353
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V IT01354
No.6367–2/5
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