파트넘버.co.kr C5046 데이터시트 PDF


C5046 반도체 회로 부품 판매점

NPN Transistor - 2SC5046



Sanyo Semicon Device 로고
Sanyo Semicon Device
C5046 데이터시트, 핀배열, 회로
Ordering number:EN4784
NPN Triple Diffused Planar Silicon Transistor
2SC5046
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High reliability (Adoption of HVP process).
· High breakdown voltage (VCBO=1600V).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC5046]
20.0 3.3
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
2.0
3.4
1.2
1 23
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Conditions
Ratings
1600
800
6
15
35
3.5
180
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=12A, IB=3A
IC=12A, IB=3A
Ratings
min typ
800
max
10
1.0
1.0
5
1.5
Unit
µA
mA
V
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12599HA (KT)/91294MT (KOTO) B8-0476 No.4784–1/4


C5046 데이터시트, 핀배열, 회로
Parameter
DC Current Gain
Storage Time
Fall Time
Switching Time Test Circuit
2SC5046
Symbol
hFE1
hFE2
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=12A
IC=8A, IB1=1.3A, IB2=–4A
IC=8A, IB1=1.3A, IB2=–4A
Ratings
min typ
15
4
0.1
max
25
7
2.0
0.2
Unit
µs
µs
No.4784–2/4




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