파트넘버.co.kr F08H60S 데이터시트 PDF


F08H60S 반도체 회로 부품 판매점

FFPF08H60S



Fairchild Semiconductor 로고
Fairchild Semiconductor
F08H60S 데이터시트, 핀배열, 회로
November 2014
FFPF08H60S
8 A, 600 V, Hyperfast II Diode
Features
Hyperfast Recovery trr = 45 ns (@ IF = 8 A)
Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
RoHS Compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Free-Wheeling Diode for Motor Application
• Power Switching Circuits
Description
The FFPF08H60S is a hyperfast II diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes
and is silicon nitride passivated ionimplanted epitaxial planar
construction. These devices are intended to be used as
freewheeling/ clamping diodes and diodes in a variety of
switching power supplies and other power switching
applications. Their low stored charge and hyperfast soft recovery
minimize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Pin Assignments
TO-220F-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 105 °C
Operating Junction and Storage Temperature
Ratings
600
600
600
8
60
- 65 to +175
Unit
V
V
V
A
A
°C
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
3.4
Unit
°C/W
Package Marking and Ordering Information
Part Number
FFPF08H60STU
Top Mark
FFPF08H60S
Package Packing Method
TO-220F-2L
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
60
©2007 Fairchild Semiconductor Corporation
FFPF08H60S Rev. C2
1
www.fairchildsemi.com


F08H60S 데이터시트, 핀배열, 회로
Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
VF1
IR1
trr
ta
tb
Qrr
WAVL
Conditions
IF = 8 A
IF = 8 A
VR = 600 V
VR = 600 V
IF =1 A, diF/dt = 100 A/µs, VR = 30 V
IF =8 A, diF/dt = 100 A/µs, VR = 390 V
IF =8 A, diF/dt = 100 A/µs, VR = 390 V
Avalanche Energy (L = 40 mH)
Notes:
1. Pulse : Test Pulse width = 300 µs, Duty Cycle = 2%
Test Circuit and Waveforms
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
15
16
18.6
-
Max
2.1
1.7
100
200
35
45
-
-
-
-
Unit
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2007 Fairchild Semiconductor Corporation
FFPF08H60S Rev. C2
2
www.fairchildsemi.com




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Fairchild Semiconductor

( fairchild )

F08H60S data

데이터시트 다운로드
:

[ F08H60S.PDF ]

[ F08H60S 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


F08H60S

FFPF08H60S - Fairchild Semiconductor