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MD332B NAND Flash Memory



Intel 로고
Intel
JS29F32G08AAMDB 데이터시트, 핀배열, 회로
Intel® MD332B NAND Flash Memory
JS29F32G08AAMDB, JS29F64G08CAMDB, JS29F16B08JAMDB
Product Features
Preliminary Datasheet
„ Open NAND Flash Interface (ONFI) 2.0
„ Core Voltage (VCC): 2.7 V - 3.6 V
Compliant
„ Multilevel cell (MLC) technology
„ First block (block address 00h) guaranteed to
be valid when shipped from factory
„ Organization:
„ Ready/busy# (R/B#) signal provides a
— Page size: 4,320 bytes (4,096 + 224 bytes) hardware method of detecting PROGRAM or
— Block size: 256 pages (1,024K + 56K bytes) ERASE cycle completion
— Plane size: 2,048 blocks
„ Read performance
— Random read: 50 µs
— Sequential read: 20 ns
„ Write performance
„ WP# signal: Entire device hardware write
protect
„ Advanced command set:
— PAGE CACHE PROGRAM
— READ CACHE
(RANDOM, SEQUENTIAL, END)
— Page program: 900 µs (TYP)
— Multi-plane commands
— Block erase: 2 ms (TYP)
„ Operation status byte provides a software
„ Endurance:
method of detecting:
— 5,000 PROGRAM/ERASE cycles
— Operation completion
— Data Retention: JEDEC compliant
„ Operating Temperature:
— Pass/fail condition
— Write-protect status
— Commercial: 0°C to +70°C
— Extended: -40°C to +85°C
Density
32 Gb
64 Gb
128 Gb
Package
TSOP
TSOP
TSOP
# of Die
SDP
DDP
QDP
1
2
4
# of CE#
and R/B#
1
2
4
Bus I/O
Configuration
single x8
single x8
single x8
Device ID
89h, 68h, 04h, 46h, A9h
89h, 68h, 04h, 46h, A9h
89h, 68h, 04h, 46h, A9h
Intel Confidential
Document Number: 320844-002US
May 2009


JS29F32G08AAMDB 데이터시트, 핀배열, 회로
L egal Lines and Disclaim ers
Ordering Information
Intel® NAND Flash devices are available in several different configurations and densities.
Decoder
J S2 9 F 3 2G 0 8 AAMDB
Product Type Designator
JS = 48 Pin Pb-Free TSOP
BK= LGA Pb-Free
Group Designator
29F = Intel® NAND Flash Memory
Density
32G = 32 Gbits
64G = 64 Gbits
16B = 16 Gbytes (128 Gbits)
32B = 32 Gbytes (256 Gbits)
Device Bus Width
08 = x8
A8 = x8, L52
Product Generation
A-H Second Generations
Lithography
D = 34 nm
Product Technology Type
M = MLC NAND Flash Memory
Operating Voltage Range
A = 3.3 V (2.70 – 3.60 V)
Device Configuration
# of Die # of CE # of R/B
/IO
A 1 1 1 Common
C 2 2 2 Common
J 4 4 4 Common
Intel® NAND Flash Memory Ordering Information
Device Name
MM #
Device Nomenclature
JS29F32G08AAMDB
903681
32 Gb x8 SDP, 1 CE, 1 R/B, 3.3 V TSOP (T & R 1,000 pc.)
JS29F64G08CAMDB
903682
64 Gb x8 DDP, 2 CE, 2 R/B, 3.3 V TSOP (T & R 1,000 pc.)
JS29F16B08JAMDB
903683
128 Gb x8 QDP, 4 CE, 4 R/B, 3.3 V TSOP (T & R 1,000 pc.)
IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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indicate your acceptance of these terms, which constitute the agreement (the “Agreement”) between you and Intel Corporation (“Intel”). In the event
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Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Intel reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
This document contains information on products in the design phase of development. The information here is subject to change without notice. Do not
finalize a design with this information.
This Preliminary Datasheet as well as the software described in it is furnished under license and may only be used or copied in accordance with the terms
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*Other names and brands may be claimed as the property of others. Copyright © 2009, Intel Corporation. All Rights Reserved.
Intel® MD332B NAND Flash Memory
Preliminary Datasheet
2
Intel Confidential
May 2009
Document Number: 320844-002US




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