J634 반도체 회로 부품 판매점
P-Channel MOSFET ( Transistor ) - 2SJ634
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 Sanyo Semicon Device |
Ordering number : ENN0000
Preliminary
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
2SJ634
P-Channel Silicon MOSFET
2SJ634
DC / DC Converter Applications
Package Dimensions
unit : mm
2083B
[2SJ634]
6.5
5.0 2.3
4 0.5
0.85
0.7
1.2
0.6
12 3
2.3 2.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Package Dimensions
unit : mm
2092B
[2SJ634]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1802 TS IM AKIBA No.0000-1/3
2SJ634
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--4A
ID=--4A, VGS=--10V
ID=--4A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--8A
VDS=--30V, VGS=--10V, ID=--8A
VDS=--30V, VGS=--10V, ID=--8A
IS=--8A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
PW=10µs
D.C.≤1%
VIN
G
VDD= --30V
ID= --4A
RL=7.5Ω
D VOUT
P.G 50Ω
2SJ634
S
Ratings
--60
±20
--8
--32
1
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
--60
Ratings
typ
--1.2
47
105
145
990
110
76
12
85
95
80
22
4
4
--0.95
max
--1
±10
--2.6
138
205
--1.2
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.0000-2/3
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J634 data
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