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K4B2G0846Q 반도체 회로 부품 판매점

2Gb Q-die DDR3L SDRAM



Samsung 로고
Samsung
K4B2G0846Q 데이터시트, 핀배열, 회로
Rev. 1.2, Apr. 2014
K4B2G0446Q
K4B2G0846Q
2Gb Q-die DDR3L SDRAM 1.35V
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
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may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
(c) 2014 Samsung Electronics Co., Ltd. All rights reserved.
-1-


K4B2G0846Q 데이터시트, 핀배열, 회로
K4B2G0446Q
K4B2G0846Q
datasheet
Revision History
Revision No.
1.0
1.1
1.2
History
- First SPEC. Release
- Added to 1866(13-13-13) speed from Product line-up (only x8)
- Added IDD value [x8 1866M(13-13-13)]
Draft Date
Jun. 2013
Mar. 2014
Apr. 2014
Rev. 1.2
DDR3L SDRAM
Remark
-
-
-
Editor
S.H.Kim
S.H.Kim
S.H.Kim
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