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Renesas Technology |
2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
www.DataSheet4U.com
Features
• Suitable for direct mounting
• High forward transfer admittance
• Excellent frequency response
• Enhancement-mode
REJ03G0903-0200
(Previous: ADE-208-1241)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
D
123
S
1. Gate
2. Source
(Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings
Item
Drain to source voltage 2SK213
2SK214
2SK215
2SK216
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
www.DataSheetC4Uha.cnonmel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSX
VGSS
ID
IDR
Pch
Pch*1
Tch
Tstg
Ratings
140
160
180
200
±15
500
500
1.75
30
150
–45 to +150
(Ta = 25°C)
Unit
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown 2SK213
voltage
2SK214
2SK215
2SK216
Gate to source breakdown voltage
Gate to source voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Note: 2. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)DSX
140
160
—
—
—
—
V ID = 1 mA, VGS = –2 V
V
180 —
—
V
200 —
—
V
V(BR)GSS
±15
—
—
V IG = ±10 µA, VDS = 0
VGS(on)
0.2
—
1.5
V ID = 10 mA, VDS = 10 V *2
VDS(sat)
—
— 2.0
V ID = 10 mA, VGD = 0 *2
|yfs| 20 40 — mS ID = 10 mA, VDS = 20 V *2
Ciss
— 90 — pF ID = 10 mA, VDS = 10 V,
Crss
— 2.2 — pF f = 1 MHz
Rev.2.00 Sep 07, 2005 page 2 of 5
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