파트넘버.co.kr C3075 데이터시트 PDF


C3075 반도체 회로 부품 판매점

NPN Transistor - 2SC3075



Toshiba Semiconductor 로고
Toshiba Semiconductor
C3075 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3075
2SC3075
Switching Regulator and High Voltage Switching
Applications
DC-DC Converter Applications
DC-AC Converter Applications
Unit: mm
· Excellent switching times: tr = 1.0 µs (max)
tf = 1.5 µs (max), (IC = 0.5 A)
· High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
500
400
7
0.8
1.5
0.5
1.0
10
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2002-07-23


C3075 데이터시트, 핀배열, 회로
2SC3075
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 400 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 0.5 A
IC = 0.1 A, IB = 0.01 A
IC = 0.1 A, IB = 0.01 A
Min Typ. Max Unit
― ― 100 µA
― ― 100 µA
500
V
400
V
20 100
10 ― ―
― ― 0.5 V
― ― 1.0 V
Rise on time
Switching time Storage time
Fall time
tr
20 µs
IB1
OUTPUT
1.0
INPUT
tstg IB2 IB2
― ― 2.5 µs
VCC 200 V
tf IB1 = IB2 = 0.05 A,
DUTY CYCLE 1%
― ― 1.5
Marking
C3075
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2 2002-07-23




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제조업체: Toshiba Semiconductor

( toshiba )

C3075 transistor

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