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PDF C5060 Data sheet ( Hoja de datos )
| Número de pieza | C5060 | |
| Descripción | NPN Transistor - 2SC5060 | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
Power transistor (90±10V, 3A)
2SC5060
2SC5060
zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L”
loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
zEquivalent circuit
C
B
R1 R2
B : Base
C : Collector
E : Emitter
R1 3kΩ
R2 1kΩ
E
zExternal dimensions (Unit : mm)
6.8 2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
∗1 Single pulse Pw=10ms
∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2.
Limits
90±10
90±10
6
1
2
1
150
−55 to +150
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5060
ATV
M
TV2
2500
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
∗1
∗2
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
∗1 Measured using pulse current. ∗2 Transition frequency of the device.
Min.
80
80
6
−
−
1000
−
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
80
20
0.2
5
0.6
Max.
100
100
−
10
3
5000
1.5
2
−
−
−
−
−
Unit
V
V
V
µA
mA
−
V
V
MHz
pF
µs
µs
µs
Conditions
IC=50µA
IC=1mA
IE=5mA
VCB=70V
VEB=5V
VCE=3V, IC=0.5A
IC/IB=500mA/1mA
IC/IB=500mA/1mA
VCB=5V, IE=−0.1A, f=30MHz
VCE=10V, IE=0A, f=1MHz
IC=0.8A, RL=50Ω
IB1= −IB2=8mA
VCC 40V
Rev.A
∗1
∗1
∗2
1/3
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C5060.PDF ] | |
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