GN1M 반도체 회로 부품 판매점
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
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 EIC discrete Semiconductors |
GN1A - GN13
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.064 gram
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13 UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 1300 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 910 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 1300 Volts
Maximum Average Forward Current Ta = 75 °C IF(AV)
1.0 Amp.
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
IFSM
30 Amps.
Maximum Forward Voltage at IF = 1.0 Amp.
VF
1.0 Volts
Maximum DC Reverse Current Ta = 25 °C
IR
5.0 µA
at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA
Typical Junction Capacitance (Note1)
CJ
8 pF
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
UPDATE : MAY 27, 1998
RATING AND CHARACTERISTIC CURVES ( GN1A - GN13 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
Ta = 25 °C
24
18
12
6
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1
TJ = 25 °C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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제조업체: EIC discrete Semiconductors
( eic )
GN1M data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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