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VO221AT, VO222AT, VO223AT
Vishay Semiconductors
Optocoupler, Photodarlington Output, Low Input Current,
High Gain, with Base Connection
i179074
A1
C2
NC 3
NC 4
i179022-2
C
8 NC
7B
6C
5E
DESCRIPTION
The VO221AT, VO222AT, VO223AT are high current transfer
ratio (CTR) optocouplers with a gallium arsenide infrared
LED emitter and a silicon NPN photodarlington transistor
detector.
The device has a CTR tested at 1 mA LED current. This low
drive current permits easy interfacing from CMOS to LSTTL
or TTL.
FEATURES
• Isolation test voltage, 4000 VRMS
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5) approved, contact
customer service if this option is required
ORDERING INFORMATION
VO2
AGENCY CERTIFIED/PACKAGE
UL, cUL
SOIC-8
2
PART NUMBER
#
≥ 100
VO221AT
AT
CTR (%)
≥ 200
VO222AT
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
INPUT
Peak reverse voltage
VR 6
Peak forward current
Forward continuous current
Power dissipation
Derate linearly from 25 °C
1 μs, 300 pps
IFM
IF
Pdiss
1
60
90
1.2
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
ICmax. DC
ICmax.
Power dissipation
t < 1 ms
BVCEO
BVECO
BVCBO
ICmax. DC
ICmax.
Pdiss
30
5
70
50
100
150
SOIC-8
6.1 mm
≥ 500
VO223AT
UNIT
V
A
mA
mW
mW/°C
V
V
V
mA
mA
mW
Rev. 1.2, 22-Nov-12
1 Document Number: 81954
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VO221AT, VO222AT, VO223AT
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Derate linearly from 25 °C
2 mW/°C
Isolation test voltage
t=1s
VISO
4000
VRMS
Total package dissipation
(at 25 °C ambient) (LED and detector)
Ptot 240 mW
Derate linearly from 25 °C
3.2 mW/°C
Storage temperature
Operating temperature
Soldering time at 260 °C
Tstg
Tamb
Tsld
- 40 to + 150
- 40 to + 100
10
°C
°C
s
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
IF = 1 mA
VR = 6 V
VR = 0 V, f = 1 MHz
VF
IR
CO
1 1.5 V
0.1 100 μA
25 pF
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leackage current
Collector base current
IC = 100 μA
IC = 10 μA
IC = 10 μA
VCE = 20 V
BVCEO
BVECO
BVCBO
ICEO
ICBO
30
5
70
V
V
V
40 nA
1 nA
Emitter base current
Collector emitter capacitance
Saturation voltage, collector emitter
COUPLER
VCE = 10 V
ICE = 0.5 mA
IEBO
CCE
VCEsat
1 nA
3.4 pF
1V
Capacitance (input to output)
CIO 0.5 pF
Note
• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
VO221AT CTRDC
100
IC/IF
IF = 1 mA, VCE = 5 V
VO222AT CTRDC
200
VO223AT CTRDC
500
TYP.
MAX.
UNIT
%
%
%
Rev. 1.2, 22-Nov-12
2 Document Number: 81954
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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