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IL213AT 반도체 회로 부품 판매점

(IL211AT / IL212AT / IL213AT) Optocoupler



Vishay 로고
Vishay
IL213AT 데이터시트, 핀배열, 회로
IL211AT, IL212AT, IL213AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
i179025
A1
K2
NC 3
NC 4
i179002-1
8 NC
7B
6C
5E
DVE
DESCRIPTION
The IL211AT, IL212AT, IL213AT are optically coupled pairs
with a gallium arsenide infrared LED and silicon NPN
phototransistor. Signal information, including a DC level,
can be transmitted by the device while maintaining a high
degree of electrical isolation between input and output.
The IL211AT, IL212AT, IL213AT comes in a standard
SOIC-8 small outline package for surface mounting which
makes it ideally suited for high density applications with
limited space. In addition to eliminating through-holes
requirements, this package conforms to standards for
surface mounted devices.
A choice of 20 %, 50 %, and 100 % minimum CTR at
IF = 10 mA makes these optocouplers suitable for a variety
of different applications.
FEATURES
• Isolation test voltage, 4000 VRMS
• Industry standard SOIC-8 surface mountable
package
• Compatible with dual wave, vapor phase and IR
reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884) (1)
• DIN EN 60747-5-5 (pending) (1)
Note
(1) Available upon request, as option 1
ORDERING INFORMATION
I L21#AT
SIOC-8
AGENCY CERTIFIED/PACKAGE
UL, cUL
SIOC-8
PART NUMBER
> 20
IL211AT
CTR (%)
10 mA
> 50
IL212AT
6.1 mm
> 100
IL213AT
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
INPUT
Peak reverse voltage
VR
Forward continuous current
IF
Power dissipation
Pdiss
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
BVCEO
Emitter collector breakdown voltage
BVECO
Collector base breakdown voltage
VCBO
ICMAX DC
ICMAX DC
ICMAX
t < 1 ms
ICMAX
Power dissipation
Pdiss
Derate linearly from 25 °C
VALUE
6
60
90
1.2
30
7
70
50
100
150
2
UNIT
V
mA
mW
mW/°C
V
V
V
mA
mA
mW
mW/°C
Document Number: 83615
Rev. 1.9, 21-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
1


IL213AT 데이터시트, 핀배열, 회로
IL211AT, IL212AT, IL213AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8 Package
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Isolation test voltage
Total package dissipation
Derate linearly from 25 °C
LED and detector
VISO
Ptot
4000
240
3.2
VRMS
mW
mW/°C
Storage temperature
Operating temperature
Soldering time
at 260 °C
Tstg
Tamb
- 55 to + 150
- 55 to + 100
10
°C
°C
s
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
IF = 10 mA
VR = 6 V
VR = 0 V
VF
1.3 1.5
V
IR 0.1 100 μA
CO 13 pF
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector dark current
Collector emitter capacitance
COUPLER
IC = 10 μA
IE = 10 μA
VCE = 10 V
VCE = 0 V
BVCEO
30
V
BVECO
7
V
ICEO
5 50 nA
CCE 10
pF
Saturation voltage, collector emitter
Isolation test voltage
Capacitance (input to output)
Resistance (input to output)
Collector emitter breakdown voltage
IF = 10 mA
1s
IC = 10 μA
VCEsat
VISO
CIO
RIO
BVCEO
4000
30
0.5
100
0.4 V
VRMS
50 pF
GΩ
V
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
Current transfer ratio
IF = 10 mA, VCE = 5 V
PART
IL211AT
IL212AT
IL213AT
SYMBOL
CTR
CTR
CTR
MIN.
20
50
100
TYP.
50
80
130
MAX.
UNIT
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Switching time
IC = 2 mA, RL = 100 Ω,
VCC = 10 V
PART
SYMBOL
ton, toff
MIN.
TYP.
3
MAX.
UNIT
μs
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 83615
Rev. 1.9, 21-Dec-10




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