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HC106H 반도체 회로 부품 판매점

2A SCRs



HAOHAI 로고
HAOHAI
HC106H 데이터시트, 핀배열, 회로
2A SCRs : 2A 系列 高灵敏度 单向可控硅【產品概況】
RoHS
英文與中文繁體版本
無鉛産品提供SGS環保認證, 符合歐美RoHS環保指令標準
Product Model Reference & Naming【產品型號參考及型號命名】
2A
(Amperes)
產品型號列表、種類區分、型號對應電壓值
200V
400V
600V
800V
1000V
1200V
觸發電流
單位:微安
TO-126 or TO-225AA
直插TO-126半封装
TO-126F
直插TO-126全封装
TO-252 or SOT428
贴片TO-252(DPAK)封装
C106B
C106BF
C106BS
C106D
C106DF
C106DS
C106M
C106MF
C106MS
C106N
C106NF
C106NS
C106H
C106HF
C106HS
C106G
C106GF
C106GS
IGT
200uA
0.2 mA
说明 Explain
已停产 标准品种 需定制 暫無量產 暫無量產 暫無量產
可代替的其它
工业型号产品
 MCR22-4DMCR22-6DMCR22-8DMCR22-10DMCR106-4MCR106-6MCR106-8MCR106-10
MCR708MCR708AMCR708ATMCR708AT4MCR714MCR714AMCR714ATMCR714AT4
MCR716MCR716AMCR716ATMCR716AT4MCR718MCR718AMCR718ATMCR718AT4
3P4J-Z5P4J-Z5P6J-ZCR5AS-8CR5AS-12SMG2D60DS2D60DSMG3D60CS3D6C
SMG5C60DS5C6DS2004DS1S2004DS2S4004DS1S4004DS2S2006DS2S2006DS3
S6004DS1S6004DS2T106BT106MT107BT107M
H C 106 D S
H: HAOHAI ELECTRONICS
H : 深圳市浩海電子有限公司
H: HAOHAI 公司縮寫
型號前綴字母:
  硅: Silicon
 控制: Controlled
整流器: Rectifier
“C”SCR
硅控制整流器
即单向可控硅
電流值表示:
106
额定电流值2A
說明:
此規格爲特制
小電流品種
電壓值表示:
B=200V
D=400V
M=600V
N=800V
H=1000V=1KV
G=1200V=1K2
封装形式表示:
无后缀: TO-126 半塑封
无后缀: : TO-225AA
F: TO-126F 全塑封
S: TO-252 表面貼
S: : SOT428DPAK
PINNING: TO-126TO-225AACASE077);TO-252SOT428DPAK
Pin Symbol
管腳排列 對應極性
Description
極性名詞
Description
SOT428
TO-126
極性含義 TO-252 SMD TO-225AA
1K
Cathode
阴極
2A
Anode
陽極
3G
Gate
-控制極
4
mb mounting base
散熱片
4
TO-252表面貼, 元件標識可按客戶指定要求
2500Pcs/Rell, 2.5Kpcs/Box, 10Kpcs/Box
TO-126袋裝, 每袋250, 每盒5K, 每箱50Kpcs
TO-252: 1.10g/Pcs, 每枚元件净重1.10
TO-126: 0.75g/Pcs, 每枚元件净重0.75
1 23
1 23
123
TO-126直插半塑封】、【SMD 貼片封裝】
Marking
元件標識
Pin Polarity Circuit Diagram
腳位與極性 電路符號表示
G
A
K
1=K=阴极
2=A=阳极
3=G=门极-控制极
4=A=Tab=mb=散热片
http://www.kkg.com.cn
HAOHAI ELECTRONICS CO., LTD.
注冊商標
KKG@Product Data 2010-03-20
仿冒必究
HC106 Series : TO-126/TO-225AATO-252/SOT428/DPAK


HC106H 데이터시트, 핀배열, 회로
2A SCRs : 2A 系列 高灵敏度 单向可控硅【規格參數】
RoHS
英文與中文繁體版本
無鉛産品提供SGS環保認證, 符合歐美RoHS環保指令標準
ABSOLUTE RATINGs (Limiting Values)【额定值参数極限值】■THERMAL RESISTANCES【熱阻】■絕緣電阻特徵
SYMBOL
符號表示
Signification in Symbol
器件參數字母符號含義
Test Conditions
測試條件說明
Value
數值
IT(RMS)
IT(AV)
通態電流均方值: On-State RMS Current (Tc=80) 180Conduction Angles
通态平均电流: Average OnState Current (180° Conduction Angles, TC=80°C)
2
2.5
ITSM
通態浪湧電流(通態不重複峰值電流): ½周期, 正弦波波, 不重复, 结温110
Non-Repetitive Peak on-state Current (½ Cycle, Sine Wave, 60Hz, Tj=110°C)
10
IGM
I2t
dIT / dt
VDRM / VRRM
VGM
Visol
PG(AV)
PGM
Tj
門極峰值電流: Forward Peak Gate Current ((Pulse Width 1.0 sec, TC=80°C)
週期電流平方時間積: Circuit Fusing Consideration (t=8.3ms)
通態臨界電流上升率: Repetitive rate of rise of on-state current after triggering (IGT1~IGT3)
斷態重復峰值電壓: Repetitive peak off-state voltages
參考型號對照列表
門極峰值電壓: Peak gate voltage
引脚到外壳最大绝缘电压: R.M.S. isolation voltage from all three terminals to external heatsink
門極平均散耗功率: Average gate power dissipation (Pulse Width 1.0 sec, TC=80°C)
門極最大峰值功率: Peak gate power (Pulse Width 1.0 sec, TC=80°C)
工作結溫: Operating Junction Temperature Range (Rate VRRM & VDRM)
0.2
1.65
50
200~1200
5
---
0.1
5.0
-40 ~ +125
Tstg
TL
Rth(j-mb)
貯存溫度: Storage Temperature Range (In Free Air)
引腳承受焊錫極限溫度: Max.Lead Temperature for Soldering Purposes 1/8" (From Case for 10 Seconds)
熱阻-結到外殼: Thermal Resistance Junction to mounting base
Full Cycle: 全波
Half Cycle: 半波
-40 ~ +150
260
3
3.7
Rth(j-a) 熱阻-結到環境: Thermal ResistanceJunctiontoAmbient
说明/Explain: 电压600V以上规格品种需订制
In Free Air
75
Unit
單位
A
A2ses
A/µs
V
W
/W
STATIC CHARACTERISTICS【静态特性】■DYNAMIC CHARACTERISTICS【動態特性】
SYMBOL
符號表示
Paramenter & Test Conditions
符號含義 及 參數測試條件說明
IGT 門極觸發電流 (VAK=6Vdc, RL=100O)
Tj=+25°C
Tj=-40°C
IDRM
IRRM
反向阻断重复峰值电流:
IPeak Repetitive Forward or Reverse Blocking Current
(VAK=Rated VDRM or VRRM, RGK=1K
Tj=+25°C
Tj=+110°C
IH
IL
VGT
VTM
VGRM
VGD
dVD / dt
維持電流: Holding Current
IVD=12Vdc, IGT=20mA, Gate Open
Tj=+25°C
Tj=-40°C
Tj=+110°C
最大接入電流(闭锁/阻塞电流): Latching Current
(VAK=12V, IGT=20mA
Tj=+25°C
Tj=-40°C
門極觸發電壓: Gate trigger voltage
(Continuous dc,(VAK=6Vdc,RL=100)
Tj=+25°C
Tj=-40°C
通態峰值電壓: Peak Forward On-State Voltage
ITM=4A
门极最高反向電壓: Peak Reverse Gate Voltage
IGR=10A
門極不觸發電壓:Gate NonTrigger Voltage(Continuous dc,VAK=12V,RL=100,TJ=110°C)
斷態臨界電壓上升率:Critical Rate of Rise of OffState Voltage
(VAK=Rated VDRM, Exponential Waveform, RGK=1K,TJ=110°C
Value 数值
Min. Typ. Max.
最小值 典型值 最大值
15 200
35 500
→ → 10
→ → 100
0.19 3.0
0.33 6.0
0.07 2.0
0.20 5.0
0.35 7.0
0.40 0.60 0.80
0.50 0.75 1.00
→ → 2.2
→ → 6.0
0.2
8.0
Unit
單位
µA
mA
V
V/µs
http://www.kkg.com.cn
HAOHAI ELECTRONICS CO., LTD.
注冊商標
KKG@Product Data 2010-03-20
仿冒必究
HC106 Series : TO-126/TO-225AATO-252/SOT428/DPAK




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