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PDF B950 Data sheet ( Hoja de datos )
| Número de pieza | B950 | |
| Descripción | PNP Transistor - 2SB950 | |
| Fabricantes | Panasonic Semiconductor | |
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Hay una vista previa y un enlace de descarga de B950 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
s Features
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
q High foward current transfer ratio hFE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB950
base voltage 2SB950A
VCBO
–60
–80
V
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to 2SB950
emitter voltage 2SB950A
VCEO
–60
–80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–8
–4
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
V
V
A
A
W
˚C
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SB950
current
2SB950A
Collector cutoff
2SB950
current
2SB950A
Emitter cutoff current
Collector to emitter 2SB950
voltage
2SB950A
ICBO
ICEO
IEBO
VCEO
VCB = –60V, IE = 0
VCB = –80V, IE = 0
VCE = –30V, IB = 0
VCE = –40V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–200
–200
µA
–500
–500
µA
–2 mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VBE
VCE(sat)1
VCE(sat)2
fT
ton
tstg
tf
VCE = –3V, IC = – 0.5A
VCE = –3V, IC = –3A
VCE = –3V, IC = –3A
IC = –3A, IB = –12mA
IC = –5A, IB = –20mA
VCE = –10V, IC = – 0.5A, f = 1MHz
1000
2000
IC = –3A, IB1 = –12mA, IB2 = 12mA,
VCC = –50V
10000
–2.5 V
–2 V
–4 V
20 MHz
0.3 µs
2 µs
0.5 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet B950.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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| B951A | PNP Transistor - 2SB951A | Panasonic Semiconductor |
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