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Hynix Semiconductor |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of
512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Sep. 2010
1
il;o;nar
512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR Series / H55S5132EFR Series
Document Title
4Bank x 4M x 32bits Synchronous DRAM
Revision History
Revision No.
1.0
1.1
1.2
History
- First Version Release
- Add AC Overshoot/Undershoot Specification
- Correction
Draft Date
Feb. 2010
Feb. 2010
Sep. 2010
Remark
Rev 1.2 / Sep. 2010
2
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