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Hynix Semiconductor |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
256M (32Mx8bit) Hynix SDRAM
Memory
Memory Cell Array
- Organized as 4banks of 8,388,608 x 8
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Aug. 2009
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Synchronous DRAM Memory 256Mbit
H57V2582GTR-xxI Series
Document Title
256Mbit (32M x8) Synchronous DRAM
Revision History
Revision No.
0.1
1.0
History
Preliminary
Release
Draft Date
Jun. 2009
Aug. 2009
Remark
Rev 1.0 / Aug. 2009
2
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