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PDF G20N60C3D Data sheet ( Hoja de datos )
| Número de pieza | G20N60C3D | |
| Descripción | HGTG20N60C3D | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HGTG20N60C3D
January 2000 File Number 4494.2
45A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is development type TA49178. The diode used in
anti-parallel with the IGBT is the RHRP3060 (TA49063).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49179.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60C3D
TO-247
G20N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTG20N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
50
RG = 10Ω, L = 1mH, VCE = 480V
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
30
25
TJ = 25oC, TJ = 150oC, VGE = 15V
20
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
RG = 10Ω, L = 1mH, VCE = 480V
175
150
TJ = 25oC, TJ = 150oC, VGE = 10V
125
100
75
50
25
TJ = 25oC and TJ = 150oC, VGE = 15V
0
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
300
RG = 10Ω, L = 1mH, VCE = 480V
275
250
225 TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 10Ω, L = 1mH, VCE = 480V
110
100
TJ = 150oC, VGE = 10V OR VGE = 15V
90
80
70
TJ = 25oC, VGE = 10V OR 15V
60
50
40
5
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
300
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
250
TC = -55oC
200
150
TC = 150oC
100
TC = 25oC
50
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
16 IG (REF) = 1mA, RL = 15Ω, TC = 25oC
14
12
10 VCE = 600V
8
6 VCE = 200V
VCE = 400V
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet G20N60C3D.PDF ] | |
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