OPB804 반도체 회로 부품 판매점
Slotted Optical Switch
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 OPTEK |
Slotted Optical Switch
OPB804
Features
x Non–contact switching
x Housing opaque material
x Printed circuit board mount
x 0.155” (3.94 mm) Width Gap
x 0.330” (8.38 mm) Depth Slot
Description
The OPB804 contains an IRLED and phototransistor
paired in a plastic housing .
The housing is an opaque grade of injection molded
plastic which minimizes the assembly’s sensitivity to
visible and near-infrared radiation. The wide open
aperture makes it versatile for general applications.
The output switches when a opaque object to IR
(700nm to 1100nm) is inserted into the gap, between
the emitter and sensor, and interrupts the light beam.
Applications
x Non-contact object sensing
x Assembly line automation
x Machine automation
x Equipment Security
x Machine safety
Ordering Information
OPB804
Slotted Switch
Customization:
Contact OPTEK for value added and next level
assembly services on this sensor.
Contact OPTEK for special electrical screening on
this sensor.
Absolute Maximum Ratings:
(TA = 25 C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (1)
-40°C to +100°C
-40°C to +85°C
240°C for 5 Seconds
Input IRLED
Forward DC Current
Peak Forward Current (1µs pulse, 300pps)
Reverse DC Voltage
Power Dissipation
50 mA
1.0A
2.0V
75 mW
Output Phototransistor
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector DC Current
Power Dissipation
30V
5V
30 mA
100 mW
Maximum Rating Notes:
1. With soldering iron 1/16 inch (1.6mm) from the case. Duration
can be extended to 10 seconds max. when flow soldering.
RMA flux is recommended.
2. All parameters measured using pulse technique.
Optek Technology, Inc.
1215 West Crosby Road
Carrollton, Texas 75006
(972) 323-2200
March 2003
Issue 2.0
www.optekinc.com
Page 1
OPB804 Technical Data
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX
Input Diode (See OP140 for additional information, reference only)
VF Forward Voltage
IR Reverse Current
- 1.25
--
1.70
100
UNITS
TEST CONDITION
V IF = 20mA
µA VR = 2.0V
Output Phototransistor (See OP550 for additional information, reference only)
V(BR) CEO
Collector-Emitter Breakdown Voltage
30
-
-
V
V(BR) ECO
Emitter-Collector Breakdown Voltage
5.0
-
-
V
ICEO Collector-Emitter Dark Current
- - 100 nA
IC = 1.0 mA, EE = 0mw/cm2
IE = 100µA, EE = 0mw/cm2
VCE = 10V,IF = 0, EE =0mw/cm2
Coupled
VCE(SAT)
IC(ON)
Collector-Emitter Saturation Voltage:
On-State Collector Current:
- - 0.40
0.50 5.00
-
V IC = 250µA, IF = 20mA
mA VCE = 10.0V, IF = 20mA
Normalized Output Current
vs. Forward Current
1000%
V CE = 10 V N o r mal iz ed t o I F =2 0 mA
T A =2 5 °C
Normalized Output Current
vs. Ambient Temperature
110%
VCE = 10V Norm alized at TA=25°C
IF=20m A
100%
100%
90%
80%
10%
0
10 20 30 40
IF - Forw ard Current - m A
50
70%
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100
Ta - Ambient Temperature - °C
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 West Crosby Road
Carrollton, Texas 75006
(972) 323-2200
March 2003
Issue 2.0
www.optekinc.com
Page 2
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OPB804 data
데이터시트 다운로드 :
[ OPB804.PDF ]
[ OPB804 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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