파트넘버.co.kr KS05VL04 데이터시트 PDF


KS05VL04 반도체 회로 부품 판매점

Low Capacitance ESD Protection



SeCoS Halbleitertechnologie 로고
SeCoS Halbleitertechnologie
KS05VL04 데이터시트, 핀배열, 회로
Elektronische Bauelemente
KS05VL04
75W, 5V
Low Capacitance ESD Protection
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The KS05VL04 is a transient voltage suppressors (TVS)
which provide a very high level protection for sensitive
electronic components that may be subjected to electrostatic
discharge (ESD). It is particularly well-suited for cellular phones,
PMP, MID, PDA, digital cameras and other electronic equipments.
The KS05VL04 is safely dissipating ESD strikes to meet the
ESD immunity testing of IEC61000-4-2 level 4 (±15KV air, ±8KV
contact). Using the MILSTD-883 (Method 3015) specification
of Human Body Model (HBM), the device provides protection
to greater than ±10kV.
TSOP-6
A
E
L
B
F CH
DG K J
APPLICATIONS
Digital Cameras
Portable Instrumentation
Notebooks, Desktops, and Serves
Personal Digital Assistants (PDAs)
Cell phone handsets and accessories
FEATURES
low clamping voltage
Low leakage current
Small package
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
Top View
MARKING
6V8U
= Date Code
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Symbol
IEC 61000-4-2 (ESD)
Air contact
Contact discharge
VESD
Peak pulse power (tp=8/20us)
PPK
Peak pulse current (tp=8/20us)
VDD-GND
I/O-GND
IPP
Storage temperature range
TJ, TSTG
Lead temperature
TL
.
http://www.SeCoSGmbH.com/
15-Oct-2012 Rev. A
Value
±15
±8
75
5
4
150, -55 ~ 150
260
Unit
kV
W
A
°C
°C
Any changes of specification will not be informed individually.
Page 1 of 3


KS05VL04 데이터시트, 핀배열, 회로
Elektronische Bauelemente
KS05VL04
75W, 5V
Low Capacitance ESD Protection
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Condition
Reveres maximum working voltage
VRWM
Reveres leakage current
IR VRWM=5V
Reveres breakdown voltage
IT=1mA, I/O-GND
VBR
IT=1mA, VDD-GND
Forward voltage
VF IF=10mA
Clamping Voltage
IPP=1A, tp=8/20us
VC
IPP=4A, tp=8/20us
Junction capacitance
I/O-GND
CJ
I/O-I/O
Min.
-
-
6.5
5.8
0.5
-
-
-
-
Typ.
-
-
8
7.3
0.7
-
-
0.7
0.35
Max.
5
1
8.8
8.1
1
12
20
0.8
-
Units
V
µA
V
V
V
V
pF
pF
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
15-Oct-2012 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3




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Low Capacitance ESD Protection - SeCoS Halbleitertechnologie