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C5336 반도체 회로 부품 판매점

NPN Transistor - 2SC5336



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Renesas
C5336 데이터시트, 핀배열, 회로
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• High gain: S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC3357
ORDERING INFORMATION
Part Number
2SC5336
2SC5336-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
20
12
3.0
100
1.2
150
65 to +150
Unit
V
V
V
mA
W
°C
°C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1996, 2001
Free Datasheet http://www.datasheet4u.com/


C5336 데이터시트, 핀배열, 회로
2SC5336
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0 mA
IEBO VBE = 1 V, IC = 0 mA
h Note 1
FE
VCE = 10 V, IC = 20 mA
fT VCE = 10 V, IC = 20 mA
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
NF VCE = 10 V, IC = 7 mA, f = 1 GHz
NF VCE = 10 V, IC = 40 mA, f = 1 GHz
C Note 2
re
VCB = 10 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
RH
RH
50 to 100
RF
RF
80 to 160
RE
RE
125 to 250
MIN. TYP. MAX. Unit
– – 1.0 µA
– – 1.0 µA
50 120 250
– 6.5 – GHz
– 12 – dB
– 1.1 – dB
– 1.8 3.0 dB
– 0.5 0.8 pF
2 Data Sheet P10938EJ2V0DS
Free Datasheet http://www.datasheet4u.com/




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C5336 transistor

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