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PDF HN27C256AG-15 Data sheet ( Hoja de datos )
| Número de pieza | HN27C256AG-15 | |
| Descripción | 32768-word x 8-bit UV Erasable and Programmable ROM | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN27C256AG Series
32768-word × 8-bit UV Erasable and Programmable ROM
Maintenance only
Description
This Hitachi HN27C256AG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring
high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry
technique, the HN27C256AG makes high speed access time possible for 16 bit microprocessors such as the
8086 and 68000. And low power dissipation in active and standby modes matches our CMOS 256-kbit
EPROM. In programming operation, the HN27C256AG realizes faster programming times than our
conventional 256-kbit EPROM by Hitachi’s Fast High-Reliability Programming Algorithm. Pin arrangement,
pin configuration and programming voltage are compatible with our 256-kbit EPROM series, therefore
existing programmers can be used with the HN27C256AG.
Features
• High speed
Access time: 100/120/150 ns (max)
• Low power dissipation
Active mode: 25 mW (typ) (f = 1 MHz)
Standby mode: 5 µW (typ)
• High reliability and fast programming
Programming voltage: +12.5 V DC
Fast High-Reliability Programming Algorithm available
• Device identifier mode
Manufacturer code and device code
Ordering Information
Type No.
HN27C256AG-10
HN27C256AG-12
HN27C256AG-15
Access Time
100 ns
120 ns
150 ns
Package
600-mil 28-pin cerdip (DG-28)
Note: This device is not available for new application.
1 page  
HN27C256AG Series
Read Operation
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VPP = VCC)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input leakage current
I LI
——2
µA Vin = 0 V to VCC
Output leakage current
I LO
—
—
2
µA Vout = 0 V to VCC
VPP current
IPP1 —
1
20 µA VPP = 5.5 V
Standby VCC current ISB1 — — 1
mA CE = VIH
ISB2 —
1
20 µA CE = VCC ± 0.3 V
Operating VCC current
I CC1
—
—
30
mA CE = VIL, Iout = 0 mA
I CC2
—
—
30
mA f = 10 MHz, Iout = 0 mA
I CC3
—
5
15 mA f = 1 MHz, Iout = 0 mA
Input low voltage*3
VIL
–0.3*1
—
0.8 V
Input high voltage*3
VIH 2.2 —
VCC + 1.0*2 V
Output low voltage
VOL — — 0.45 V
IOL = 2.1 mA
Output high voltage
VOH1
2.4
—
—
V
IOH = –1.0 mA
VOH2
VCC – 0.7 —
—
V
IOH = –100 µA
Notes: 1. VIL min = –1.0 V for pulse width ≤ 50 ns.
2. VIH max = VCC + 1.5 V for pulse width ≤ 20 ns.
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Only defined for DC function test. VIL max = 0.45 V, VIH min = 2.4 V for AC function test.
5 Page 
HN27C256AG Series
High Performance Programming
This device can be applied the high performance programming algorithm shown in following flowchart. This
algorithm is as same as our 256-kbit EPROM series so existing programmers can be used with this device.
This algorithm allows to obtain faster programming time without any voltage stress to the device nor
deterioration in reliability of programmed data.
START
SET PROG./VERIFY MODE
VPP = 12.5 ± 0.5 V, VCC = 6.0 ± 0.25 V
Address = 0
n=0
Address + 1 Address
n+1 n
Program tPW = 1.0 ms ± 5%
VERIFY
NOGO
GO
Program tOPW = 3n ms
NO LAST
Address?
YES
SET READ MODE
VCC = 5.0 V ± 0.5 V, VPP = VCC
n = 25
YES
NO
READ
All Address
GO
END
NOGO
FAIL
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HN27C256AG-15.PDF ] | |
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