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GW45HF60WD 반도체 회로 부품 판매점

STGW45HF60WD



ST Microelectronics 로고
ST Microelectronics
GW45HF60WD 데이터시트, 핀배열, 회로
STGW45HF60WD
Features
Improved Eoff at elevated temperature
Low CRES / CIES ratio (no cross-conduction
susceptibility)
Ultra fast soft recovery antiparallel diode
Applications
Welding
High frequency converters
Power factor correction
Description
The "HF" series is based on a new planar
technology concept to yield an IGBT with tighter
variation of switching energy (Eoff) versus
temperature. Suffix "W" denotes a subset of
products tailored to high switching frequency
operation over 100 kHz.
45 A, 600 V ultra fast IGBT
Preliminary data
TO-247
3
2
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW45HF60WD
GW45HF60WD
Package
TO-247
Packaging
Tube
August 2009
Doc ID 15593 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/9
www.st.com
9


GW45HF60WD 데이터시트, 핀배열, 회로
Electrical ratings
1 Electrical ratings
STGW45HF60WD
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
VCES
IC (1)
IC (1)
ICP(2)
ICL (3)
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Collector current (pulsed)
Turn-off latching current
VGE Gate-emitter voltage
IF Diode RMS forward current at TC = 25 °C
IFSM Surge not repetitive forward current tp= 10 ms sinusoidal
PTOT Total dissipation at TC = 25 °C
Tstg Storage temperature
Tj Operating junction temperature
1. Calculated according to the iterative formula:
600
70
45
TBD
TBD
± 20
30
120
250
– 55 to 150
IC(TC)
=
--------------------------------------T----j-(--m----a---x---)---–-----T---C----------------------------------------
Rthj c × VCE(sat)(max)(Tj(max), IC(TC))
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA
3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 , TJ = 150 °C
Unit
V
A
A
A
A
V
A
A
W
°C
Table 3. Thermal data
Symbol
Parameter
Thermal resistance junction-case IGBT
Rthj-case
Thermal resistance junction-case diode
Rthj-amb Thermal resistance junction-ambient
Value
0.5
1.5
50
Unit
°C/W
°C/W
°C/W
2/9 Doc ID 15593 Rev 2




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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

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