AN11130 반도체 회로 부품 판매점
Bias module
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 NXP Semiconductors |
AN11130
Bias module for 50 V GaN demonstration boards
Rev. 1 — 8 December 2011
Application note
Document information
Info Content
Keywords
GaN, bias
Abstract
This application note describes a bias controller module for GaN HEMT
RF power transistors. It provides constant quiescent drain current with
temperature, special bias and power sequencing, and overcurrent
protection.
NXP Semiconductors
Revision history
Rev Date
v.1 20111208
Description
initial version
AN11130
Bias module for 50 V GaN demonstration boards
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
AN11130
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 December 2011
© NXP B.V. 2011. All rights reserved.
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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Bias module - NXP Semiconductors