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Toshiba |
SF25GZ51,SF25JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF25GZ51,SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
Unit in mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600 V
Repetitive Peak Reverse Voltage : VRRM = 400, 600 V
l Average On−State Current
: IT (AV) = 25 A
l Isolation Voltage
: VIsol = 1500 V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Off−State Voltage and
Repetitive Peak Reverse
Voltage
SF25GZ51
SF25JZ51
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive < 5 ms,
Tj = 0~125°C)
SF25GZ51
SF25JZ51
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
VIsol
400
600
500
720
25
39
350 (50 Hz)
385 (60 Hz)
612
100
5
0.5
10
-5
2
-40~125
-40~125
1500
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
V
Note : di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns
JEDEC
EIAJ
TOSHIBA
Weight : 5.9g
―
―
13−16A1B
1 2001-05-10
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Holding Current
Critical Rate of Rise of Off−State Voltage
Thermal Resistance
IDRM
IRRM
VTM
VGT
IGT
IH
dv / dt
Rth (j−c)
VDRM = VRRM = Rated
ITM = 80 A
VD = 6 V, RL = 10 Ω
VD = 6 V, ITM = 500 mA
VDRM = Rated, Tc = 125°C
Exponential Rise
Junction to Case
SF25GZ51,SF25JZ51
MIN. TYP. MAX. UNIT
― ― 20 µA
― ― 1.5 V
― ― 1.5 V
― ― 20 mA
― ― 100 mA
― 50 ― V / µs
― ― 1.3 °C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SF25GZ51
SF25JZ51
MARK
F25GZ51
F25JZ51
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2 2001-05-10
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