파트넘버.co.kr K3047 데이터시트 PDF


K3047 반도체 회로 부품 판매점

MOSFET ( Transistor ) - 2SK3047



Panasonic Semiconductor 로고
Panasonic Semiconductor
K3047 데이터시트, 핀배열, 회로
Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 25ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
800
±30
±2
±4
15
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
30
2
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Turn-off time (delay time)
td(off)
Fall time
tf
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1A
VDS = 25V, ID = 1A
IDR = 2A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 1A
VDD = 200V, RL = 200
9.9±0.3
unit: mm
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.3
1 2 3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
min typ max Unit
0.1 mA
±1 µA
800 V
2 5V
4.8 7
0.7 1.1
S
1.3 V
350 pF
60 pF
25 pF
15 ns
20 ns
60 ns
25 ns
1


K3047 데이터시트, 핀배열, 회로
Power F-MOS FETs
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
t =10µs
3 100µs
1 1ms
DC
0.3 10ms
0.1 100ms
0.03
0.01
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
ID VDS
4
TC=25˚C
3 VGS=15V 10V
7V
2
6.5V
6V
1
5.5V
5V
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
RDS(on) ID
12
10
8
6 VGS=10V
15V
4
2
0
012345
Drain current ID (A)
PD Ta
60
(1) TC=Ta
(2) Without heat sink
50
40
30
(1)
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VGS
5
VDS=25V
4
3
2
1
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
| Yfs | ID
2.0
VDS=25V
TC=25˚C
1.5
1.0
0.5
2SK3047
EAS Tj
30
VDD=50V
ID=2A
25
20
15
10
5
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
Vth TC
6
VDS=25V
ID=1mA
5
4
3
2
1
0
0 25 50 75 100 125 150
Case temperature TC (˚C)
Ciss, Coss, Crss VDS
10000
f=1MHz
TC=25˚C
1000
Ciss
100
Coss
10 Crss
0
01234
Drain current ID (A)
1
0 50 100 150 200
Drain to source voltage VDS (V)
2




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