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Hitachi Semiconductor |
2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-767C (Z)
4th. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source
http://www.Datasheet4U.com
2SK3140
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note 1
D(pulse)
I DR
I Note 3
AP
E Note 3
AR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
60
±20
60
240
60
50
214
35
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2
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