파트넘버.co.kr B1321A 데이터시트 PDF


B1321A 반도체 회로 부품 판매점

PNP Transistor - 2SB1321A



Panasonic Semiconductor 로고
Panasonic Semiconductor
B1321A 데이터시트, 핀배열, 회로
Transistors
2SB1321A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1992A
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
Large collector power dissipation P C (600 mW)
Allowing supply with the radial taping
0.65 max.
I Absolute Maximum Ratings Ta = 25°C
0.45+−00..105
2.5±0.5 2.5±0.5
123
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
50
7
1
500
600
150
55 to +150
V
V
V
A
mA
mW
°C
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
1.2±0.1
0.45+−00..105
0.65
max.
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
fT
Cob
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCE = −10 V, IC = −10 mA
VCE = −10 V, IC = −500 mA
IC = −300 mA, IB = −30 mA
VCB = −10 V, IE = 10 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
60
50
7
85
40
0.1
1
340
0.35
200
6
0.6
15
µA
µA
V
V
V
V
MHz
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for rank.
1
http://www.Datasheet4U.com


B1321A 데이터시트, 핀배열, 회로
2SB1321A
Transistors
PC Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
1 200
1 000
IC VCE
Ta = 25°C
800
600
400
200
IB = −10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
100
30
10
VCE(sat) IC
IC / IB = 10
3
1
0.3
0.1
Ta = 75°C
25°C
25°C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
VBE(sat) IC
100
IC / IB = 10
30
10
3
25°C
1
0.3
0.1
Ta = −25°C
75°C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
800
700
IC IB
VCE = −10 V
Ta = 25°C
600
500
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10
Base current IB (mA)
hFE IC
600
VCE = −10 V
500
400
300
Ta = 75°C
200 25°C
25°C
100
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
240
220
200
180
160
140
120
100
80
60
40
20
0
1
fT IE
VCB = −10 V
Ta = 25°C
2 3 5 10 20 30 50 100
Emitter current IE (mA)
Cob VCB
24
IE = 0
22 f = 1 MHz
20 Ta = 25°C
18
16
14
12
10
8
6
4
2
0
1 2 3 5 10 2030 50 100
Collector to base voltage VCB (V)
120
100
VCER RBE
IC = −2 mA
Ta = 25°C
80
60
40
20
0
1 3 10 30 100 300 1 000
Base to emitter resistance RBE (k)
2




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PNP Transistor - 2SB1321A - Panasonic Semiconductor