|
SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD850
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High voltage ,high speed
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN DE
SCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified o utline ( TO-3) a nd s ymbol
Absolute maximum ratings(Ta= )
SYMBOL P
ARAMETER
VCBO
VCEO
VEBO
IC
ICM C
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ollector current-peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=90 25
VALUE
1500
700
5
3
5
150
-65~150
UNIT
V
V
V
A
A
W
http://www.Datasheet4U.com
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD850
CHARACTERISTICS
Tj=25 u nless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600
V(BR)EBO Emitter-base breakdown votage
IE=10mA; IC=0
VCEsat C ollector-emitter saturation voltage IC=2.5 A;IB=0.8A
VBEsat B ase-emitter saturation voltage
IC=2.5 A;IB=0.8A
ICBO Collector cut-off current
VCB=750V;IE=0
VCB=1500V;IE=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V 8
hFE-2
DC current gain
IC=2.5A ; VCE=10V 4
tf Fall time
ts Storage time
IC=2.5A;IBend=0.8A;LB=5µH
MIN TYP. MAX UNIT
V
5V
4.0 V
1.5 V
50 µA
1.0 m A
15
1.0 µs
13 µs
2
|