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PDF D9N40 Data sheet ( Hoja de datos )
| Número de pieza | D9N40 | |
| Descripción | AOD9N40 | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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 1. PDF - 400V,8A N-Channel MOSFET  Hay una vista previa y un enlace de descarga de D9N40 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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AOD9N40
400V,8A N-Channel MOSFET
General Description
Product Summary
The AOD9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC -DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
500V@150℃
8A
<0.8Ω
Top View
TO252
DPAK
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C 8
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
400
±30
5
22
3.2
150
300
5
125
1
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
0.7
Maximum
55
0.5
1
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2010
www.aosmd.com
Page 1 of 6
http://www.Datasheet4U.com
1 page  
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150 10
120 8
90 6
60 4
30 2
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note B)
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
300 TA=25°C
200
100
0
0.01
0.1 1 10 100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1000
0.1
0.01
0.001
0.0001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1000
10000
Rev0: Dec 2010
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet D9N40.PDF ] | |
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