(PDF) P20N06 Datasheet

Número de pieza	P20N06
Descripción	CEP20N06
Fabricantes	CET
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No Preview Available ! CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 28 20 112 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 50 0.4 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . Symbol RθJC RθJA 1 Limit 3 50 Units C/W C/W Rev 1. 2010.Dec http://www.cetsemi.com http://www.Datasheet4U.com 1 page

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PDF P20N06 Data sheet ( Hoja de datos )