CNY64AGRST 반도체 회로 부품 판매점
Optocoupler
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 Vishay |
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
CNY64ST
Top View
AC
CNY65ST
CE
DVE
17187-6
17187-5
DESCRIPTION
The CNY6XST, the high isolation voltage SMD version
optocouplers consist of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4 pin
plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
• IEC 60065
Safety for mains-operated electronic and related
household apparatus
• VDE 0160
Electronic equipment for electrical power installation
FEATURES
• Rated recurring peak voltage (repetitive)
VIORM = 1450 Vpeak
• Thickness through insulation ≥ 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI ≥ 475
• Moisture sensitivity level MSL4
- Follow defined storage and soldering
requirements
• Compliant to RoHS Directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
in
APPLICATIONS
• Solar and wind power diagnostic, monitoring, and
communication equipment
• Welding equipment
• High voltage motors
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I to IV at mains voltage ≤ 300 V
- for appl. class I to IV at mains voltage ≤ 600 V
- for appl. class I to III at mains voltage ≤ 1000 V
according to DIN EN 60747-5-2 (VDE 0884)
AGENCY APPROVALS
• DIN EN 60747-5-2 (VDE 0884) (pending)
• UL1577, file no. E76222 system code H, J, and K
(pending)
• VDE related features:
- rated impulse voltage (transient overvoltage),
VIOTM = 12 kVpeak
- isolation test voltage (partial discharge test voltage),
Vpd = 2.8 kVpeak
ORDERING INFORMATION
CNY 6 # XXXS T
CNY64ST
CNY65ST
PART NUMBER
PACKAGE
OPTION
AGENCY CERTIFIED/PACKAGE
UL, VDE
SMD-4 HV, 400 mil high isolation distance
SMD-4 HV, 600 mil high isolation distance
50 to 300
CNY64ST
CNY65ST
CTR BIN
10.16 mm
CTR (%)
5 mA
50 to 150
80 to 240
CNY64AYST
CNY64ABST
CNY65AYST
CNY65ABST
15.24 mm
100 to 300
CNY64AGRST
CNY65AGRST
Rev. 1.0, 20-Sep-11
1 Document Number: 82387
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
tp ≤ 10 μs
VR 5
V
IF 75 mA
IFSM
1.5
A
Pdiss 120 mW
Tj 100 °C
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
tp/T = 0.5, tp ≤ 10 ms
VCEO
VECO
IC
ICM
Pdiss
Tj
32
7
50
100
130
100
V
V
mA
mA
mW
°C
AC isolation test voltage CNY64AxxxST
DC isolation test voltage CNY65AxxxST
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
t = 1 min
t=1s
2 mm from case, ≤ 10 s
VISO
VISO
Ptot
Tamb
Tstg
Tsld
8.2
13.9
250
- 55 to + 85
- 55 to + 100
260
kVRMS
kV
mW
°C
°C
°C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Junction capacitance
OUTPUT
IF = 50 mA
VR = 0, f = 1 MHz
VF
Cj
1.32 1.6
50
V
pF
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
IC = 1 mA
IE = 100 μA
VCE = 20 V, IF = 0 mA
VCEO
VECO
ICEO
32
7
V
V
200 nA
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
IF = 10 mA, IC = 1 mA
VCE = 5 V, IF = 10 mA, RL = 100 Ω
f = 1 MHz
VCEsat
fc
Ck
0.3 V
110 kHz
0.3 pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.0, 20-Sep-11
2 Document Number: 82387
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
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