파트넘버.co.kr MA6216 데이터시트 PDF


MA6216 반도체 회로 부품 판매점

(MA6116 / MA6216) RADIATION HARD 2048 x 8 BIT STATIC RAM



GEC PLESSEY 로고
GEC PLESSEY
MA6216 데이터시트, 핀배열, 회로
MA6116 &MAMRCAH62191965
MA6116 & MA6216
RADIATION HARD 2048 x 8 BIT STATIC RAM
DS3582-3.1
The MA6116 16k Static RAM is configured as 2048 x 8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology. The MA6216 is manufactured using 2.5µm technology
resulting in faster performance.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when chip select is in the HIGH state.
Operation Mode CS OE WE I/O Power
Read
Write
Write
Standby
L L H D OUT
L H L D IN
L L L D IN
H X X High Z
ISB1
ISB2
Figure 1: Truth Table
FEATURES
s 3µm CMOS-SOS Technology
s Latch-up Free
s Fast Access Time 110ns (MA6116) and 85ns
(MA6216) Typical
s Total Dose 106 Rad(Si)
s Transient Upset >1010 Rad(Si)/sec
s SEU <10-10 Errors/bitday
s Single 5V Supply
s Three State Output
s Low Standby Current 100µA Typical
s -55°C to +125°C Operation
s TTL and CMOS Compatible Inputs
s Fully Static Operation
Figure 2: Block Diagram
1
http://www.Datasheet4U.com


MA6216 데이터시트, 핀배열, 회로
MA6116 & MA6216
CHARACTERISTICS AND RATINGS
Symbol
VDD
VI
TA
TS
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
VDD+0.3
125
150
Units
V
V
°C
°C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at TA = -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose
radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request).
2. Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C.
3. GROUP A SUBGROUPS 1, 2, 3.
Symbol Parameter
Conditions
Min.
Typ.
Max. Units
VDD Supply voltage
-
4.5
VlH Input High Voltage
-
VDD/2
VlL Input Low Voltage
-
VSS
VOH Output High Voltage
IOH1 = -1mA
2.4
VOL Output Low Voltage
IOL = 4mA
-
ILI Input Leakage Current (note 2) All inputs except CS
-
ILO Output Leakage Current (note 2) Output disabled, VOUT = VSS or VDD
-
IDD Power Supply Current
fRC = 1MHz, CS = 50% mark:space
-
ISB1 Selected Supply Current
All inputs = VDD-0.2V except
CS = VSS+0.2V
-
ISB2 Standby Supply Current
Chip disabled, CS = VDD-0.2V
-
Figure 4: Electrical Characteristics
5.0
-
-
-
-
-
-
20
50
0.1
5.5 V
VDD V
0.8 V
-V
0.4 V
±10 µA
±20 µA
40 mA
70 mA
5 mA
Symbol Parameter
VDR VCC for Data Retention
IDDR Data Retention Current
Conditions
Min.
CS = VDR
CS = VDR, VDR = 2.0V
2.0
-
Figure 5: Data Retention Characteristics
Typ.
-
50
Max.
-
3000
Units
V
µA
2
http://www.Datasheet4U.com




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MA6216

(MA6116 / MA6216) RADIATION HARD 2048 x 8 BIT STATIC RAM - GEC PLESSEY