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PDF MX25L25735E Data sheet ( Hoja de datos )

Número de pieza MX25L25735E
Descripción FLASH MEMORY
Fabricantes MACRONIX 
Logotipo MACRONIX Logotipo



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MX25L25735E
MX25L25735E
HIGH PERFORMANCE
SERIAL FLASH SPECIFICATION
P/N: PM1586
REV. 1.2, FEB. 10, 2012
1
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MX25L25735E pdf
MX25L25735E
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
268,435,456 x 1 bit structure or 134,217,728 x 2 bits (two I/O mode) structure or 67,108,864 x 4 bits (four I/O
mode) structure
• 8192 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 1024 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 512 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 4-bytes address interface
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 80MHz with 8 dummy cycles
- 2 I/O: 70MHz with 4 dummy cycles
- 4 I/O: 70MHz with 6 dummy cycles
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously Program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.5s(typ.) /block (32K-byte per block); 0.7s(typ.) /block
(64K-byte per block); 160s(typ.) /chip
• Low Power Consumption
- Low active read current: 45mA(max.) at 80MHz, 40mA(max.) at 70MHz and 30mA(max.) at 50MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Standby current: 200uA (max.)
- Deep power down current: 80uA (max.)
• Typical 100,000 erase/program cycles
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- BP0-BP3 block group protect
- Flexible individual block protect when OTP WPSEL=1
P/N: PM1586
REV. 1.2, FEB. 10, 2012
5
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MX25L25735E arduino
MX25L25735E
Table 2. Protected Area Sizes
Status bit
Protection Area
BP3 BP2 BP1 BP0 256Mb
0 0 0 0 0 (none)
0 0 0 1 1 (2 blocks, block 510th-511th)
0 0 1 0 2 (4 blocks, block 508th-511th)
0 0 1 1 3 (8 blocks, block 504th-511th)
0 1 0 0 4 (16 blocks, block 496th-511th)
0 1 0 1 5 (32 blocks, block 480th-511th)
0 1 1 0 6 (64 blocks, block 448nd-511th)
0 1 1 1 7 (128 blocks, block 384th-511th)
1 0 0 0 8 (256 blocks, block 256th-511th)
1 0 0 1 9 (512 blocks, all)
1 0 1 0 10 (512 blocks, all)
1 0 1 1 11 (512 blocks, all)
1 1 0 0 12 (512 blocks, all)
1 1 0 1 13 (512 blocks, all)
1 1 1 0 14 (512 blocks, all)
1 1 1 1 15 (512 blocks, all)
Note: The device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP3, BP2, BP1, BP0) are 0.
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit One-Time Program area for setting de-
vice unique serial number - Which may be set by factory or system maker. Please refer to Table 3. 4K-bit Se-
cured OTP Definition.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with ENSO command), and going
through normal program procedure, and then exiting 4K-bit secured OTP mode by writing EXSO command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to table of "Security Register Definition" for secu-
rity register bit definition and table of "4K-bit Secured OTP Definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit Se-
cured OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
xxx000~xxx00F
xxx010~xxx1FF
Size
128-bit
3968-bit
Standard Factory Lock
ESN (electrical serial number)
N/A
Customer Lock
Determined by customer
P/N: PM1586
11
REV. 1.2, FEB. 10, 2012
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