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ROHM Semiconductor |
VT6T1 / EMT51
General purpose transister (isolated dual transistors)
Datasheet
Parameter
VCEO
IC
Tr1 and Tr2
-20V
-200mA
lFeatures
1) General Purpose.
2) Two 2SAR522 chips in one package.
3) Transister elements are independent, eliminating
interface.
4) Mounting cost and area can be cut in half.
5) Lead Free/RoHS Compliant.
lOutline
VMT6
EMT6
VT6T1
EMT51
(SC-107C)
lInner circuit
lApplication
Switching, LED driver
lPackaging specifications
Part No.
Package
Package
size
VT6T1
EMT51
VMT6
EMT6
1212
1616
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2R 180
T2R 180
8
8
8000
8000
T1
T51
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© 2013 ROHM Co., Ltd. All rights reserved.
1/7
20130905 - Rev.002
http://www.Datasheet4U.com
VT6T1 / EMT51
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
VT6T1
EMT51
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2 *3
Tj
Tstg
Values
-20
-20
-5
-200
-400
150
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
℃
℃
lElectrical characteristics (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = -50μA
-20 -
-
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
-20 -
-
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
BVEBO
ICBO
IEBO
VCE(sat)
hFE
IE = -50μA
VCB = -20V
VEB = -5V
IC = -100mA, IB = -10mA
VCE = -6V, IC = -1mA
-5
-
-
-
120
-
-
-
-0.12
-
-
-0.1
-0.1
-0.30
560
Transition frequency
fT
VCE = -10V, IE = 10mA,
f = 100MHz
-
350
-
Unit
V
V
V
μA
μA
V
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
- 1.6 - pF
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/7
20130905 - Rev.002
http://www.Datasheet4U.com
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