K3216-01 반도체 회로 부품 판매점
MOSFET ( Transistor ) - 2SK3216-01
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 Fuji Electric |
2SK3216-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation Ta=25°C
Tc=25°C
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
PD
Tch
Tstg
Rating
100
±50
±200
±30
464
1.67
135
+150
-55 to +150
Unit
V
A
A
V
mJ
W
W
°C
°C
*1 L=298µH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=100V
VGS=0V
VGS=±30V VDS=0V
ID=25A VGS=10V
ID=25A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=48V ID=50A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
100
2.5 3.0
3.5
1 100
0.1 0.5
10 100
V
V
µA
mA
nA
20 25
16.0 32.0
mΩ
S
3200 4800
760 1140
pF
230 345
23 35
130 195
110 165
65 100
ns
50 A
0.97
1.46 V
150 ns
0.80
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.93 °C/W
75.0 °C/W
1
Free Datasheet http://www.Datasheet4U.com
2SK3216-01
Characteristics
Power Dissipation
PD=f(Tc)
150
125
100
75
50
25
0
0 25 50 75 100 125 150
Tc [°C]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
125
VGS=20V
15V
10V
7.0V
100
6.5V
75
6.0V
50
5.5V
25 5.0V
4.5V
0
01234
VDS [V]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
102
5
101
100
10-1 10-1
100 101
ID [A]
102
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):Single Pulse(D=0),Tc=25°C
103
t=
1µs
102 10µs
D.C.
100µs
101
100
10-1
10-1
t
t
D=
T
T
100 101
VDS [V]
1ms
10ms
100ms
102
103
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
02468
VGS [V]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
0.08
VGS=
0.07
4.5V
5.0V
5.5V
6.0V
10
0.06
0.05
0.04
0.03
0.02
6.5V
7.0V
10V
15V
20V
0.01
0.00
0
20 40 60 80 100 120
ID [A]
2
Free Datasheet http://www.Datasheet4U.com
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Fuji Electric
( fuji )
K3216-01 data
데이터시트 다운로드 :
[ K3216-01.PDF ]
[ K3216-01 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
