65N20-30 반도체 회로 부품 판매점
SUM65N20-30
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 Vishay Siliconix |
New Product
SUM65N20-30
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
200
rDS(on) (W)
0.030 @ VGS = 10 V
ID (A)
65 a
D
TO-263
G DS
Top View
SUM65N20-30
G
S
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive
– 42-V EPS and ABS
– DC/DC Conversion
– Motor Drives
D Isolated DC/DC converters
– Primary-Side Switch
– High Voltage Synchronous Rectifier
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 200
VGS "20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cd
ID
IDM
IAR
EAR
PD
TJ, Tstg
65a
37a
140
35
61
375c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount (TO-263)d
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71702
S-04920—Rev. A, 15-Oct-01
Symbol
RthJA
RthJC
Limit
40
0.4
Unit
_C/W
www.vishay.com
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Free Datasheet http://www.Datasheet4U.com
SUM65N20-30
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125_C
VDS = 160 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 100 V, VGS = 10 V, ID = 85 A
VDD = 100 V, RL = 1.5 W
ID ^ 65 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 65 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
200
V
24
"100
nA
1
50 mA
250
120 A
0.023
0.030
0.063
W
0.084
25 S
5100
480
210
90
23
34
24
220
45
200
130
35
330
70
300
pF
nC
ns
65
A
140
1.0 1.5 V
130 200 ns
8 12 A
0.52 1.2 mC
www.vishay.com
2
Document Number: 71702
S-04920—Rev. A, 15-Oct-01
Free Datasheet http://www.Datasheet4U.com
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( vishay )
65N20-30 data
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