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PDF P55N06 Data sheet ( Hoja de datos )
| Número de pieza | P55N06 | |
| Descripción | FDP55N06 | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP55N06 / FDPF55N06
N-Channel UniFETTM MOSFET
60 V, 55 A, 22 mΩ
Features
• RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A
• Low Gate Charge ( Typ. 30 nC)
• Low Crss ( Typ. 60 pF)
• 100% Avalanche Tested
October 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GDS
TO-220
G
GDS TO-220F
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max,
FDP55N06
FDPF55N06
60
55 55 *
34.8 34.8 *
220 220 *
± 25
480
55
11.4
4.5
114 48
0.9 0.4
-55 to +150
300
FDP55N06
1.1
0.5
62.5
FDPF55N06
2.58
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDP55N06 / FDPF55N06 Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
1. Z? JC(t) = 1.1 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
1 0 -5
1 0 -4
10-3
10-2
1 0 -1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
D = 0 .5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
10-2 single pulse
* Notes :
1. Z? JC(t) = 2.58 oC /W M ax.
2. Duty Factor, D=t1/t2
3. T JM - T C = PDM * Z? JC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
©2005 Fairchild Semiconductor Corporation
FDP55N06 / FDPF55N06 Rev. C0
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet P55N06.PDF ] | |
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