88N30W-HF-3 반도체 회로 부품 판매점
AP88N30W-HF-3
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP88N30W-HF-3
N-channel Enhancement-mode Power MOSFET
Low On-Resistance
Simple Drive Requirement
Fast Switching Characteristics
G
D
S
BV DSS
R DS(ON)
ID
300V
48mΩ
48A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP88N30W-HF-3 is in the TO-3P through-hole package which is
widely used in higher power commercial and industrial applications
where an attached heatsink is required.
This device is well suited for use in applications such as motor drives,
inverteers and DC/DC converters.
G
DS
D (tab)
TO-3P (W)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
IDM
IDR
IDR(PULSE)
PD at TC=25°C
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current1
Total Power Dissipation
Linear Derating Factor
Avalanche Current
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
Rating
300
±30
48
160
48
160
312
2.5
30
45
-55 to 150
-55 to 150
Units
V
A
A
A
A
W
W/°C
A
mJ
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.4
40
Units
°C/W
°C/W
Ordering Information
AP88N30W-HF-3TB : in RoHS-compliant, halogen-free TO-3P, shipped in tubes (1440 pcs/carton)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201009158-3
1/5
Free Datasheet http://www.Datasheet4U.com
Advanced Power
Electronics Corp.
AP88N30W-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=30A
Drain-Source Leakage Current
VDS=300V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=240V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=±30V, VDS=0V
ID=30A
Gate-Source Charge
VDS=240V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=10V
VDS=150V
Rise Time
ID=30A
Turn-off Delay Time
RG=10Ω
Fall Time
VGS=10V
Input Capacitance
VGS=0V
Output Capacitance
VDS=15V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
Min. Typ. Max. Units
300 - - V
- - 48 mΩ
3 - 4.5 V
- 62 -
S
- - 1 uA
- - 200 uA
- - ±0.1 uA
- 150 250 nC
- 35 - nC
- 60 - nC
- 50 - ns
- 105 - ns
- 220 - ns
- 110 - ns
- 8440 13500 pF
- 1775 - pF
- 70 - pF
- 2.2 3.3 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test
3. Starting Tj=25°C , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
Min. Typ. Max. Units
- - 1.5 V
- 300 - ns
- 3.8 - µC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5
Free Datasheet http://www.Datasheet4U.com
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PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Advanced Power Electronics
( ape )
88N30W-HF-3 data
데이터시트 다운로드 :
[ 88N30W-HF-3.PDF ]
[ 88N30W-HF-3 다른 제조사 검색 ]
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