K3304 반도체 회로 부품 판매점
MOSFET ( Transistor ) - 2SK3304
|
|
 NEC |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching
power supply.
ORDERING INFORMATION
PART NUMBER
2SK3304
PACKAGE
TO-3P
FEATURES
• Low gate charge :
QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A)
• Avalanche capability ratings
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
900
±30
±7
±21
130
3.0
–55 to + 150
7
147
V
V
A
A
W
W
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13992EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
2000
Free Datasheet http://www.Datasheet4U.com
2SK3304
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Leakage Current
IDSS VDS = 900 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1.0 mA
Forward Transfer Admittance
| yfs | VDS = 20 V, ID = 4.0 A
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 4.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 150 V
ID = 4.0 A
VGS(on) = 10 V
RG = 10 Ω, RL ≅ 36 Ω
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
QGS
QGD
VF(S-D)
VDD = 450 V
VGS = 10 V
ID = 7.0 A
IF = 7.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 7.0 A, VGS = 0 V
Qrr di/dt = 50 A/µs
MIN. TYP. MAX. UNIT
100 µA
±100 nA
2.5 3.5 V
2.5 4.7
S
1.6 2.0 Ω
1300
pF
240 pF
55 pF
20 ns
44 ns
73 ns
45 ns
44 nC
6 nC
28 nC
1.0 V
2.4 µs
13.5 µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
RL VGS
VGS
Wave Form
010 %
VGS(on) 90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D13992EJ1V0DS00
Free Datasheet http://www.Datasheet4U.com
|
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
K330
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc
K3302
Silicon N Channel MOS Type Field Effect Transistor - Toshiba Semiconductor
K3304
MOSFET ( Transistor ) - 2SK3304 - NEC
K3306
MOSFET ( Transistor ) - 2SK3306 - NEC