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New Intelligent Power Modules



Fuji 로고
Fuji
7MPB25RA120 데이터시트, 핀배열, 회로
New Intelligent Power Modules (R Series)
Atsushi Yamaguchi
Hiroaki Ichikawa
1. Introduction
The equipment of power electronics application is
comprised of general use inverters, numeric control
(NC) machine tools, and industrial robots. Recently,
the requirements of lower noise, higher efficiency,
advanced functions, lower price, and downsizing for
these items have been growing.
The power devices used as the equipment of power
electronics applications are progressing toward lower
loss and higher frequency, and the IGBT (insulated
gate bipolar transistor) rather than the bipolar transis-
tor is gaining popularity.
On the other hand, together with lowered loss for
the IGBT, intelligence is achieved by locating the
peripheral circuits such as the driving circuit and
various protective circuits inside the module. It then
becomes possible to shorten the design time at the
power circuit and contributes to downsizing and ad-
vanced equipment function.
In keeping step with the trends of making the
power devices intelligent, Fuji Electric announced the
bipolar transistor type of intelligent power modules
(BJT-IPM) in 1989. In 1992, the J series of IGBT-IPM
(J-IPM) that pursued lower loss was developed and in
1995 the N series of IGBT-IPM (N-IPM) aimed at
lower price and lower noise was developed and pro-
duced. This time, the R series of IGBT-IPM (R-IPM)
pursues higher cost performance, higher reliability and
advanced functions.
The line-up and features of Fuji Electric’s IGBT-
IPMs and the R-IPM are introduced in the following.
2. Fuji Electric’s Conventional IGBT-IPM Line-Up
and Problems
The line-up, performances and features of both the
J-IPM and N-IPM are shown in Table 1. The J-IPM
was developed with particular attention to low loss.
The N-IPM realized low noise (soft switching) and low
loss in order to respond to the market needs of EMC
(electro magnetic compatibility) regulations and to
match the CE mark. Furthermore, the N-IPM is an
IPM with a lower price and higher reliability made
possible by the adoption of new construction and new
materials. The integrated functions are shown in
Table 1 The J-IPM and the N-IPM
Series
J-IPM
N-IPM
Type
6MBP15JB060
6MBP20JB060
6MBP100JA060
6MPB150JA060
6MBP200JA060
6MBP100JA120
7MBP50JB060
7MBP75JB060
7MBP50JA120
6MBP50NA060
6MPB75NA060
6MPB100NA060
7MBP50NA060
7MBP75NA060
7MBP100NA060
VCES (V)
600
600
600
600
600
1,200
600
600
1,200
600
600
600
600
600
600
Inverter
IC (A)
15
20
100
150
200
100
50
75
50
50
75
100
50
75
100
PC (W)
40
50
240
450
600
600
150
195
240
198
320
400
198
320
400
Dynamic brake
VCES (V)
IC (A)
––
––
––
––
––
––
600 30
600 30
1,200
15
––
––
––
600 30
600 50
600 50
PC (W)
80
80
80
120
198
198
Features
Low loss
High speed switching
Low loss
Soft switching
High reliability
New Intelligent Power Modules (R Series)
27
Free Datasheet http://www.Datasheet4U.com


7MPB25RA120 데이터시트, 핀배열, 회로
Table 2. The functions of the J-IPM and N-IPM are
identical, and the protection functions against short
circuit, overcurrent, drive power supply under-voltage
and overheating are integrated.
However, since both the J-IPM and the N-IPM are
constructed of many types of electronics parts, there
are of course some limits to downsizing and low price.
To protect against overheating the temperature of the
insulation substrate mounted with the IGBT chips was
detected by thermistors. But it became problematic in
applications where the current was concentrated into a
few chips like motor lock mode, as shown in Fig. 1.
Table 2 Protective functions of the IPM
Function
Description
Overcurrent
protection
Monitor collector current of every IGBT,
and protect against overcurrent by cutting
off the current
Short circuit
protection
Protects against short circuit current by
cutting off the current by the same means
as overcurrent protection
Drive power supply
under-voltage
protection
Detects drive power supply voltage, and
protect in order to avoid destruction
caused by under-voltage in case of lowering
of voltage
Stores precise thermistor as temperature
Overheat protection sensor and protects against abnormal
temperature rise by rejection of output
Fig.1 Current path and waveform at motor lock
W VU
Ic Ic
When the current was concentrated to the chip which
was located on the far side from the sensor on the
substrate, the sensor could not follow the rapid
temperature risings and could not protect it. In order
to solve these problems and to realize higher perfor-
mance as well as higher cost performance, the R-IPM
was developed.
3. The R-IPM
The line-up, characteristics and integrated func-
tions are shown in Table 3. The R-IPM has been
applied the 3rd generation IGBT chip, which V CE (sat) is
2.3V typically, thereby achieving lower loss. Further-
more, they are comprised of the Tj detecting overheat
protection function in addition to the former IPM’s
functions. Outlines, external view and internal equiv-
alent circuit are shown in Figs. 2, 3 and 4 respectively.
Because it is composed of a wide range including
the ratings of 600V/50 to 300A and 1,200V/25 to 150A
Fig.2 Package outline drawing of the R-series IPM
109
95 5.5
4-
1 4 7 10 16
B
P
NW V U
M
Ic Phase current
Z
PN-current
Y
(a) Current path at motor lock
X
Phase current
(20A/div)
PN-current
(25A/div)
Conditions : 200V AC, f c = 11.8kHz
(b) Wave form at motor lock
(a) P610, P611
138
121
1 4 7 10 16
P
N
U
P
B
N
VW
5.5
4-
(b) P612
28 Vol. 44 No. 1 FUJI ELECTRIC REVIEW
Free Datasheet http://www.Datasheet4U.com




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New Intelligent Power Modules - Fuji