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PDF GB10NB37LZ Data sheet ( Hoja de datos )
| Número de pieza | GB10NB37LZ | |
| Descripción | STGB10NB37LZ | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
V CES
VCE(s at)
IC
STGB10NB37LZ CLAMPED < 1.8 V 10 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s AUTOMOTIVE IGNITION
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VCES Collector-Emitter Volt age (VGS = 0)
VECR
VGE
IC
IC
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at Tc = 25 oC
Collector Current (continuous) at Tc = 100 oC
ICM(•)
Ptot
Collector Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
ESD ESD (Human Body Model)
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Value
CLA M PE D
18
CLA M PE D
20
20
60
125
0. 83
4
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /o C
KV
oC
oC
1/8
Free Datasheet http://www.0PDF.com
1 page  
Capacitance Variations
STGB10NB37LZ
Gate Charge vs Gate-Emitter Voltage
Off Losses vs Gate Resistance
Off Losses vs Collector Current
Break-down Voltage vs Temperature
Clamping Voltage vs Gate Resistance
5/8
Free Datasheet http://www.0PDF.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet GB10NB37LZ.PDF ] | |
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