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PDF K2004-01L Data sheet ( Hoja de datos )
| Número de pieza | K2004-01L | |
| Descripción | MOSFET ( Transistor ) - 2SK2004-01L | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SK2004-01L,S
FAP-IIA Series
N-channel MOS-FET
1000V 3,6Ω 4A 80W
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Outline Drawing
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current
V DS
V DGR
ID
1000
1000
4
Pulsed Drain Current
I D(puls)
16
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=1000V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=2A
VGS=10V
Forward Transconductance
g fs ID=2A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
t r ID=4A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10 Ω
Avalanche Capability
I AV L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
1000
2,5
2
4
Typ. Max.
3,0
10
0,2
10
2,7
5
1300
100
35
20
15
85
20
3,5
500
1,0
100
3,6
1950
150
55
30
25
130
30
4
16
1,1 1,65
400
3
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
125 °C/W
1,56 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet K2004-01L.PDF ] | |
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