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FB17N50L 반도체 회로 부품 판매점

SIHFB17N50L



Vishay 로고
Vishay
FB17N50L 데이터시트, 핀배열, 회로
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
130
33
59
Single
0.28
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Low Trr and Soft Diode Recovery
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• ZVS and High Frequency Circuit
• PWM Inverters
TO-220
IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD 16 A, dI/dt 347 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
LIMIT
500
± 30
16
11
64
1.8
390
16
22
220
13
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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1
Free Datasheet http://www.Datasheet4U.com


FB17N50L 데이터시트, 핀배열, 회로
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
0.56
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.9 Ab
VDS = 50 V, ID = 9.9 Ab
500 -
-V
- 0.6 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 µA
- - 2.0 mA
-
0.28 0.32
Ω
11 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VGS = 0 V
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VDS = 400 V , f = 1.0 MHz
VDS = 0 V to 400 Vc
VGS = 10 V
ID = 16 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 16 A,
RG = 7.5 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
-
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
2760
325
37
3690
84
159
-
-
-
21
51
50
28
-
-
-
-
-
-
130
33
59
-
-
-
-
pF
nC
ns
- 16
A
- 64
Body Diode Voltage
VSD
TJ = 25 °C, IS = 16 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
TJ = 25 °C
- 170 250
trr ns
TJ = 125 °C IF = 16 A, dI/dt = 100 A/µsb
-
220 330
TJ = 25 °C
- 470 710
Qrr nC
TJ = 125 °C
- 810 1210
Reverse Recovery Current
IRRM
-
7.3 11
A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
Free Datasheet http://www.Datasheet4U.com




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