|
Vishay |
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
130
33
59
Single
0.28
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Low Trr and Soft Diode Recovery
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• ZVS and High Frequency Circuit
• PWM Inverters
TO-220
IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD ≤ 16 A, dI/dt ≤ 347 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
LIMIT
500
± 30
16
11
64
1.8
390
16
22
220
13
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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1
Free Datasheet http://www.Datasheet4U.com
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
0.56
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.9 Ab
VDS = 50 V, ID = 9.9 Ab
500 -
-V
- 0.6 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 µA
- - 2.0 mA
-
0.28 0.32
Ω
11 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VGS = 0 V
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VDS = 400 V , f = 1.0 MHz
VDS = 0 V to 400 Vc
VGS = 10 V
ID = 16 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 16 A,
RG = 7.5 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
-
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
2760
325
37
3690
84
159
-
-
-
21
51
50
28
-
-
-
-
-
-
130
33
59
-
-
-
-
pF
nC
ns
- 16
A
- 64
Body Diode Voltage
VSD
TJ = 25 °C, IS = 16 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
TJ = 25 °C
- 170 250
trr ns
TJ = 125 °C IF = 16 A, dI/dt = 100 A/µsb
-
220 330
TJ = 25 °C
- 470 710
Qrr nC
TJ = 125 °C
- 810 1210
Reverse Recovery Current
IRRM
-
7.3 11
A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
Free Datasheet http://www.Datasheet4U.com
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