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1Gb NAND Flash



Samsung 로고
Samsung
K9F1G08U0D 데이터시트, 핀배열, 회로
Rev. 1.1, Nov. 2010
K9F1G08U0D
1Gb NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
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SPECIFICATIONS WITHOUT NOTICE.
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herein is provided on an "AS IS" basis, without warranties of any kind.
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2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
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K9F1G08U0D 데이터시트, 핀배열, 회로
K9F1G08U0D
datasheet
Rev. 1.1
FLASH MEMORY
Revision History
Revision No.
0.0
0.1
1.0
1.1
History
1. Initial issue
1. Max tR value has changed from 35us to 40us
2. Min tRC/ tWC value has changed from 30ns to 25ns
3. Chapter 2.9, 2.10 AC parameters revised
4. Chapter 2.3 ISB2 MAX value has changed from 50 to 80
5. Chapter 2.6 Capacitance value has changed from 8 to 10
1. FBGA pkg code change H->B
2. Device code(4th Cycle) has changed from 15h to 95h
3. Chapter 1.5.1 63ball FBGA pkg dimension has changed.
1. Chapter 2.4 NOTE is Amendment.
2. Chapter 1.4.1 PACKAGE DIMENSIONS revised.
3. Chapter 1.5 Pin Configuration (FBGA) revised.
Draft Date
Dec. 09, 2009
May. 03, 2010
Remark
Advance
Advance
Editor
-
H.K.Kim
Jul. 07, 2010
Nov. 12, 2010
Final
Final
H.K.Kim
H.K.Kim
-2-
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