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SavantIC |
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With ITO-220 package
·Switching power transistor
Product Specification
2SC4234
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM Collector current-Peak
IB Base current
IBM Base current-peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
VALUE
1200
800
7
3
6
1
2
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
2.77
UNIT
/W
Free Datasheet http://www.datasheet-pdf.com/
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4234
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A;IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated volatge
IEBO Emitter cut-off current
At rated volatge
hFE-1
DC current gain
IC=1.5A; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=0.3A ; VCE=10V
ton Turn-on time
ts Storage time
tf Fall time
IC=1.5A;IB1=0.3A
IB2=0.6A ,RL=170C
VBB2=4V
MIN TYP. MAX UNIT
800 V
1.0 V
1.5 V
0.1 mA
0.1 mA
8
7
8 MHz
0.5 µs
3.5 µs
0.3 µs
2
Free Datasheet http://www.datasheet-pdf.com/
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