J652 반도체 회로 부품 판매점
P-Channel MOSFET ( Transistor ) - 2SJ652
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 Sanyo Semicon Device |
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Ordering number : ENN7625
2SJ652
P-Channl Silicon MOSFET
2SJ652
General-Purpose Switching Device Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Motor drive, DC / DC converter.
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ652]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Ratings
--60
±20
--28
--112
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J652
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
min
--60
--1.2
18
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
26 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72503 TS IM TA-4245 No.7625-1/4
Free Datasheet http://ww
2SJ652
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--14A, VGS=--10V
ID=--14A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--28A
VDS=--30V, VGS=--10V, ID=--28A
VDS=--30V, VGS=--10V, ID=--28A
IS=--28A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --30V
ID= --14A
RL=2.1Ω
D VOUT
2SJ652
P.G 50Ω S
Ratings
min typ max
Unit
28.5
38 mΩ
39 55.5 mΩ
4360
pF
470 pF
335 pF
33 ns
210 ns
310 ns
180 ns
80 nC
15 nC
12 nC
--0.96
--1.2 V
--50
Tc=25°C
--40
ID -- VDS
--4V
--30
--20
VGS= --3V
--10
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06535
--50
VDS= --10V
--40
ID -- VGS
--30
--20
--10 25°C
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06536
No.7625-2/4
Free Datasheet http://www.Datasheet-PDF.com/
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국내 전력반도체 판매점
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