QS3VH245PA 반도체 회로 부품 판매점
IDTQS3VH245PA
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 IDT |
IDTQS3VH245
2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH® PRODUCTS
2.5V / 3.3V 8-BIT HIGH
BANDWIDTH BUS SWITCH
INDUSTRIALTEMPERATURERANGE
IDTQS3VH245
FEATURES:
• N channel FET switches with no parasitic diode to VCC
– Isolation under power-off conditions
– No DC path to VCC or GND
– 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low RON - 4Ω typical
• Flat RON characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent RON matching between channels
• VCC operation: 2.3V to 3.6V
• High bandwidth - up to 500MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in QSOP, SOIC, and TSSOP packages
APPLICATIONS:
• Hot-swapping
• 10/100 Base-T, Ethernet LAN switch
• Low distortion analog switch
• Replaces mechanical relay
• ATM 25/155 switching
• Bus switching and isolation
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
TheQS3VH245 HotSwitch8-bitbusswitchisahighbandwidthbusswitch.
The QS3VH245 has very low ON resistance, resulting in under 250ps
propagation delay through the switch. The switches can be turned ON under
thecontroloftheLVTTL-compatibleOutputEnable signalforbidirectionaldata
flow with no added delay or ground bounce. In the ON state, the switches can
passsignalsupto5V. IntheOFFstate,theswitchesofferveryhighimpedence
at the terminals.
The combination of near-zero propagation delay, high OFF impedance, and
over-voltage tolerance makes the QS3VH245 ideal forhigh performance
communicationsapplications.
The QS3VH245 is characterized for operation from -40°C to +85°C.
A0 A1 A2 A3 A4 A5 A6 A7
OE
B0 B1 B2 B3 B4 B5 B6 B7
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
c 2003 Integrated Device Technology, Inc.
1
MARCH 2003
DSC-5775/6
Free Datasheet http://www.Datasheet-PDF.com/
IDTQS3VH245
2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH
PIN CONFIGURATION
NC
A0
A1
A2
A3
A4
A5
A6
A7
GND
1
2
3
4
5
6
7
8
9
10
20 VCC
19 OE
18 B0
17 B1
16 B2
15 B3
14 B4
13 B5
12 B6
11 B7
QSOP/ SOIC/ TSSOP
TOP VIEW
INDUSTRIALTEMPERATURERANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max Unit
VTERM(2) SupplyVoltage to Ground
–0.5 to +4.6 V
VTERM(3) DC Switch Voltage VS
–0.5 to +5.5 V
VTERM(3) DC Input Voltage VIN
–0.5 to +5.5 V
VAC AC Input Voltage (pulse width ≤20ns)
–3 V
IOUT DC Output Current (max. sink current/pin) 120 mA
TSTG Storage Temperature
–65 to +150 °C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VCC terminals.
3. All terminals except VCC .
CAPACITANCE (TA = +25°C, F = 1MHz, VIN = 0V, VOUT = 0V)
Symbol
Parameter(1)
Typ. Max. Unit
CIN Control Inputs
3 5 pF
CI/O Quickswitch Channels (Switch OFF) 4 6 pF
CI/O
Quickswitch Channels (Switch ON)
8
12 pF
NOTE:
1. This parameter is guaranteed but not production tested.
PIN DESCRIPTION
Pin Names
Description
OE Output Enable
A x Data I/Os
B x Data I/Os
FUNCTION TABLE(1)
OE
H
L
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
Outputs
Disconnected
Ax = Bx
2
Free Datasheet http://www.Datasheet-PDF.com/
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QS3VH245PA data
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