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PDF J649 Data sheet ( Hoja de datos )
| Número de pieza | J649 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ649 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ649
Isolated TO-220
FEATURES
• Low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
• Low input capacitance:
Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
–60
m 20
m 20
m 70
25
V
V
A
A
W
Total Power Dissipation (TA = 25°C)
PT 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS –20 A
EAS 40 mJ
(Isolated TO-220)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002
Free Datasheet http://www.datasheet4u.net/
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
90
80
70
VGS = −4.0 V
60
50
−10 V
40
30
20
10 Pulsed
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
2SJ649
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
VGS = 0 V
f = 1 MHz
Ciss
Coss
100 Crss
10
–0.1
–1 –10 –100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
VGS = –10 V
RG = 0 Ω
100
td(off)
tf
10 td(on)
tr
1
–0.1 –1 –10 –100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 50 - 10
- 45
- 40
VDD = −48 V
- 35 −30 V
- 30 −12 V
- 25
VGS
-8
-6
- 20 - 4
- 15
- 10
-5
0
0
-2
VDS ID = −20 A
Pulsed
0
5 10 15 20 25 30 35 40
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 Pulsed
VGS = –10 V
–10
–4.0 V
–1 0 V
–0.1
–0.01
0
–0.5 –1.0
VF(S-D) - Source to Drain Voltage - V
–1.5
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1 10
IF - Diode Forward Current - A
100
Data Sheet D16332EJ1V0DS
5
Free Datasheet http://www.datasheet4u.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet J649.PDF ] | |
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