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ETC |
GaAs Hall Element
HG-106C
•High-stability GaAs Hall element.
•Ultra mini-mold SMT package.
•Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
•Absolute Maximum Ratings
Item
Symbol
Limit
Max. Input Voltage Vin
10
Max. Power Dissipation PD
150
Operating Temp. Range Topr. –40 to +125
Storage Temp. Range Tstg. –40 to +150
Unit
V
mW
˚C
˚C
•Electrical Characteristics(Ta=25˚C)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Output Hall Voltage VH B=0.1T, Vc=6V
Input Resistance Rin B=0T, Ic=0.1mA
Output Resistance Rout B=0T, Ic=0.1mA
Offset Voltage Vos B=0T, Vc=6V
110
650
650
–11
150 mV
850
850
+11 mV
Temp. Coefficient of VH VH 25˚C to 125˚C
-0.06 %/˚C
Temp. Coefficient of Rin Rin B=0T, Ic=0.1mA
Linearity of output
Hall voltage
K
B=0.1/0.5T, Ic=0.5mA
Notes : 1. VH = VHM – Vos (VHM:meter indication)
2.
VH
=
1
VH (T1)
X
VH (T2)
(T2
–
–
VH (T1)
T1)
X
100
3.
Rin =
1
Rin (T1)
X
Rin
(T2)
(T2
–
–
Rin (T1)
T1)
X
100
4.
K=
K (B1) – K (B2)
[K (B1) + K (B2)] / 2
X 100
T1 = 25˚C, T2 = 125˚C
K=
VH
IC • B
B1 = 0.5T, B2 = 0.1T
0.3 %/˚C
2%
•Dimensional Drawing (mm)
1.5±0.1
0.3 0.9
0.3
0.3
14
0 to 0.1
23
3˚
3˚ 5˚
0.1
5˚ Pinning
Input
Output
1(±)
2(±)
3
4
•Characteristic Curves
Allowable Package Power Dissipation (PD–Ta)
200
160
120
80
40
0
0 20 40 60 80 100 120 140
Ambient Temperature.(˚C)
36
HG-106C
Rin-T
1000
800
600
400
200
0
–50
0 50 100
Ambient Temperature(˚C)
VH-B
600
500
400
300
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
Ta = 25 (˚C)
Ic
Vc
200
100
0
150 0 100 200
Magnetic Flux Density B (mT)
300
b
c
VH-T
200
150
100
50
0
–50
Ic
Vc
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
B = 0.1 (T)
0 50 100
Ambient Temperature(˚C)
150
VH-Vc, VH-Ic
250
Ic const
Vc const
200
B = 0.1 (T)
Ta = 25 (˚C)
150
100
Vc
Ic
50
0
0 24 6 8
Ic (mA) Input Current
Vc (V) Input Voltage
g
Ic:(mA)
10 Vc:(V)
Vos-T
8
7
6 Ic
5 Vc
4
3
2
1
0
-50
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
B = 0 (mT)
0 50 100
Ambient Temperature(˚C)
150
*Magnetic Flux Density
1(mT)=10(G)
Vos-Vc, Vos-Ic
15
Ic const
Vc const
B = 0 (mT)
10 Ta = 25 (˚C)
5
Vc
Ic
0
02 46 8
Ic (mA) Input Current
Vc (V) Input Voltage
In This Example : Rin=750( ), Vos=4.6(mV), Vc=6(V)
j
Ic:(mA)
10 Vc:(V)
37
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