파트넘버.co.kr HG-106C 데이터시트 PDF


HG-106C 반도체 회로 부품 판매점

High-stability GaAs Hall element



ETC 로고
ETC
HG-106C 데이터시트, 핀배열, 회로
GaAs Hall Element
HG-106C
•High-stability GaAs Hall element.
•Ultra mini-mold SMT package.
•Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
•Absolute Maximum Ratings
Item
Symbol
Limit
Max. Input Voltage Vin
10
Max. Power Dissipation PD
150
Operating Temp. Range Topr. –40 to +125
Storage Temp. Range Tstg. –40 to +150
Unit
V
mW
˚C
˚C
•Electrical Characteristics(Ta=25˚C)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Output Hall Voltage VH B=0.1T, Vc=6V
Input Resistance Rin B=0T, Ic=0.1mA
Output Resistance Rout B=0T, Ic=0.1mA
Offset Voltage Vos B=0T, Vc=6V
110
650
650
–11
150 mV
850
850
+11 mV
Temp. Coefficient of VH VH 25˚C to 125˚C
-0.06 %/˚C
Temp. Coefficient of Rin Rin B=0T, Ic=0.1mA
Linearity of output
Hall voltage
K
B=0.1/0.5T, Ic=0.5mA
Notes : 1. VH = VHM – Vos (VHM:meter indication)
2.
VH
=
1
VH (T1)
X
VH (T2)
(T2
VH (T1)
T1)
X
100
3.
Rin =
1
Rin (T1)
X
Rin
(T2)
(T2
Rin (T1)
T1)
X
100
4.
K=
K (B1) – K (B2)
[K (B1) + K (B2)] / 2
X 100
T1 = 25˚C, T2 = 125˚C
K=
VH
IC • B
B1 = 0.5T, B2 = 0.1T
0.3 %/˚C
2%
•Dimensional Drawing (mm)
1.5±0.1
0.3 0.9
0.3
0.3
14
0 to 0.1
23
3˚ 5˚
0.1
Pinning
Input
Output
1(±)
2(±)
3
4
•Characteristic Curves
Allowable Package Power Dissipation (PDTa)
200
160
120
80
40
0
0 20 40 60 80 100 120 140
Ambient Temperature.(˚C)
36


HG-106C 데이터시트, 핀배열, 회로
HG-106C
Rin-T
1000
800
600
400
200
0
–50
0 50 100
Ambient Temperature(˚C)
VH-B
600
500
400
300
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
Ta = 25 (˚C)
Ic
Vc
200
100
0
150 0 100 200
Magnetic Flux Density B (mT)
300
b
c
VH-T
200
150
100
50
0
–50
Ic
Vc
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
B = 0.1 (T)
0 50 100
Ambient Temperature(˚C)
150
VH-Vc, VH-Ic
250
Ic const
Vc const
200
B = 0.1 (T)
Ta = 25 (˚C)
150
100
Vc
Ic
50
0
0 24 6 8
Ic (mA) Input Current
Vc (V) Input Voltage
g
Ic:(mA)
10 Vc:(V)
Vos-T
8
7
6 Ic
5 Vc
4
3
2
1
0
-50
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
B = 0 (mT)
0 50 100
Ambient Temperature(˚C)
150
*Magnetic Flux Density
1(mT)=10(G)
Vos-Vc, Vos-Ic
15
Ic const
Vc const
B = 0 (mT)
10 Ta = 25 (˚C)
5
Vc
Ic
0
02 46 8
Ic (mA) Input Current
Vc (V) Input Voltage
In This Example : Rin=750( ), Vos=4.6(mV), Vc=6(V)
j
Ic:(mA)
10 Vc:(V)
37




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: ETC

( etc )

HG-106C data

데이터시트 다운로드
:

[ HG-106C.PDF ]

[ HG-106C 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


HG-106A

GaAs Hall Element - AKM



HG-106C

High-stability GaAs Hall element - ETC



HG-106R

GaAs Hall Element - AKM